Enhancement in emission angle of the blue LED chip fabricated on lens patterned sapphire (0 0 0 1)

Solid-State Electronics

Volumn 54, Issue 5, 2010, Pages 509-515

  Kissinger, Suthan ^a   Jeong, Seong Muk ^a   Yun, Seok Hyo ^a   Lee, Seung Jae ^b   Kim, Dong Wook ^a   Lee, In Hwan ^a   Lee, Cheul Ro ^a  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

Dry etching; Lens patterned sapphire substrate; Light emitting diode; MOCVD

Indexed keywords

BLUE LED CHIPS; BLUE LEDS; BLUE LIGHT-EMITTING; CRYSTAL QUALITIES; EMISSION ANGLE; EMISSION EFFICIENCIES; GROWTH PROCESS; INJECTION CURRENTS; LENS SHAPE; LUMINOUS INTENSITY; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; MULTIQUANTUM WELLS; OUTPUT POWER; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; XRD;

CHEMICAL VAPOR DEPOSITION; DIODES; DRY ETCHING; FABRICATION; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LENSES; LIGHT EMISSION; OPTICAL INSTRUMENTS; PLASMA ETCHING; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SULFUR COMPOUNDS; X RAY DIFFRACTION;

LIGHT EMITTING DIODES;

EID: 77949422808     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.11.005     Document Type: Article

References (27)

1. Nakamura S., Pearton S., and Fasol G. The blue laser diode. 2nd ed. (2000), Springer, Berlin
2. Koike M., Shibata N., Kato H., and Takahashi Y. Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications. IEEE J Sel Top Quant Electron 8 (2002) 271-277
3. Schubert E.F., and Kim J.K. Solid-state light sources getting smart. Science 308 (2005) 1274-1278
4. Krames M.P., Shchekin O.B., Mach R.M., Mueller G.O., Zhou L., Harbers G., et al. Status and future of high-power light-emitting diodes for solid-state lighting. J Disp Technol 3 (2007) 160
5. Amano H., Takanami S., Iwaya M., Kamiyama S., and Akasaki I. Group III nitride-based UV light emitting devices. Phys Status Solidi A 195 (2003) 491-495
6. Sharma N., Thomas P., Tricker D., and Humphreys C. Chemical mapping and formation of V-defects in InGAN multiple quantum wells. Appl Phys Lett 77 (2000) 1274-1276
7. 2 areas via metalorganic vapor phase epitaxy. J Electron Mater 27 (1998) 233-237
8. Tadatomo K., Okagawa H., Ohuchi Y., Tsunekawa T., Imada Y., Kato M., et al. High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy. Jpn J Appl Phys 40 (2001) L583-L585
9. Wuu D.S., Wang W.K., Shih W.C., Horng R.H., Lee C.E., Lin W.Y., et al. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates. IEEE Photon Technol Lett 17 (2005) 288-290
10. Lee Y.J., Hwang J.M., Hsu T.C., Hsieh M.H., Jou M.J., Lee B.J., et al. Enhancing the output power of GaN-Based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photon Technol Lett 18 (2006) 1152-1154
11. Strittmatter A., Rodt S., Reibmann L., Bimberg D., Schroder H., Obermier E., et al. Maskless epitaxial lateral overgrowth of GaN layers on structured Si (1 1 1) substrates. Appl Phys Lett 78 (2001) 727-729
12. Yamada M., Mitani T., Narukawa Y., Shioji S., Niki I., Sonobe S., et al. InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode. Jpn J Appl Phys 41 (2002) L1431-L1433
13. Feng Z.H., and Lau K.M. Enhanced luminescence from GaN-based blue leds grown on grooved sapphire substrates. IEEE Photon Technol Lett 17 (2005) 1812-1814
14. Cuong T.V., Cheong H.S., Kim H.G., Kim H.Y., Hong C.H., Suh E.K., et al. Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning. Appl Phys Lett 90 (2007) 131107
15. Wu G.M., and You Z.D. Enhanced light extraction efficiency by surface lattice arrays using blue InGaN/GaN multiple quantum wells. Solid-State Electron 51 (2007) 1351-1359
16. Hsu Y.P., Chang S.J., Su Y.K., Sheu J.K., Lee C.T., Wen T.C., et al. Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs. J Cryst Growth 26 (2004) 466-470
17. Che S.B., Terashima W., Ishitani I., Yoshikawa A., Matsuda T., Ishii H., et al. Fine-structure N-polarity InN/InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy. Appl Phys Lett 86 (2005) 261903
18. Kang D.H., Song J.C., Shim B.Y., Ko E.A., Kim D.W., Kannappan S., et al. Characteristic comparison of gan grown on patterned sapphire substrates following growth time. Jpn J Appl Phys 46 (2007) 2563-2566
19. Murakami H., Kawaguchi N., Kangawa N., Kumagai Y., and Koukitu A. Impact of crystallization manner of the buffer layer on the crystalline quality of GaN epitaxial layers on GaAs (1 1 1)A substrates. J Cryst Growth 275 (2005) e1149-e1154
20. Bell A., Liu R., Ponce F.A., Amano H., Akasaki I., and Cherns D. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. Appl Phys Lett 82 (2002) 349-351
21. Zang K.Y., Wang Y.D., Chua S.J., Wang L.S., and Tripathy S. Nano hetero epitaxial lateral overgrowth of GaN on nanoporous Si(1 1 1). Appl Phys Lett 88 (2006) 141925
22. ] Huang H.W., Lai C.F., Wang W.C., Lu T.C., Kuo H.C., Wang S.C., et al. Efficiency enhancement of gan-based power-chip leds with sidewall roughness by natural lithography. Electrochem Soild-State Lett 10 (2007) H59-H62
23. Wuu D.S., Wang W.K., Wen K.S., Huang S.C., Lin S.H., Huang S.Y., et al. Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally over grown GaN on a GaN/patterned sapphire template. Appl Phys Lett 89 (2006) 161105
24. Su Y.K., Chen J.J., Lin C.L., Chen S.M., Li W.L., and Kao C.C. GaN-based light-emitting diodes grown on photonic crystal-patterned sapphire substrates by nanosphere lithography. Jpn J Appl Phys 47 (2008) 6706-6708
25. Mukai T., Takekawa K., and Nakamura S. InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates. Jpn J Appl Phys 37 (1998) L839-L841
26. Peng W.C., and Wu Y.C.S. Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface. Appl Phys Lett 89 (2006) 041116
27. Lee H.Y., Pan K.H., Lin C.C., Chang Y.C., Kao F.J., and Lee C.T. Current spreading of III-nitride. J Vac Sci Technol B25 (2007) 1280-1283