Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Peng, Wei Chih ^a   Wu, Yew Chung Sermon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); EPITAXIAL GROWTH; PHOTONS; SEMICONDUCTING INDIUM COMPOUNDS; WSI CIRCUITS;

BACKSIDE LUMINANCE; EPITAXIAL FILMS; INJECTION CURRENTS;

LIGHT EMITTING DIODES;

EID: 33746657704     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2236462     Document Type: Article

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