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Volumn 90, Issue 13, 2007, Pages

Enhanced light output from aligned micropit InGaN-based light emitting diodes using wet-etch sapphire patterning

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; WET ETCHING;

EID: 34047112278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2714203     Document Type: Article
Times cited : (103)

References (18)
  • 13
    • 0000869692 scopus 로고    scopus 로고
    • S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 77, 3236 (2000).
    • S. X. Jin, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 77, 3236 (2000).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.