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Volumn 46, Issue 4 B, 2007, Pages 2563-2566

Characteristic comparison of GaN grown on patterned sapphire substrates following growth time

Author keywords

GaN; Lateral growth; MOCVD; Patterned sapphire substrate; Threading dislocation

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

GROWTH TIME; LATERAL GROWTH; PATTERNED SAPPHIRE SUBSTRATE; THREADING DISLOCATION;

GALLIUM NITRIDE;

EID: 34547888772 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.46.2563 Document Type: Article

Times cited : (24)

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