Enhanced light extraction efficiency by surface lattice arrays using blue InGaN/GaN multiple quantum wells

Solid-State Electronics

Volumn 51, Issue 10 SPEC. ISS, 2007, Pages 1351-1359

  Wu, G M ^a   You, Z D ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Gallium nitride; Light extraction; Photoluminescence; Surface lattice array

Indexed keywords

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

ETCHING DEPTH; LIGHT EXTRACTION EFFICIENCY; SQUARE LATTICE ARRAY; SURFACE LATTICE ARRAY;

CRYSTAL LATTICES;

EID: 35048832799     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.08.007     Document Type: Article

References (17)

1. Boroditsky M., and Yablonovitch E. Light-emitting diode extraction efficiency. Proc SPIE 3002 (1997) 119
2. Sheu J.K., Chi G.C., Su Y.K., Liu C.C., Chang C.M., Hung W.C., et al. Luminescence of an InGaN/GaN multiple quantum well light-emitting diode. Solid State Electron 44 (2000) 1055
3. Smith J.V. Geometrical and structural crystallography (1982), Wiley, New York
4. Lee T.X., Gao K.F., Chien W.T., and Sun C.C. Light extraction analysis of GaN-based light-emitting diodes with surface texture and/or patterned substrate. Opt Express 15 (2007) 6670
5. Fujii T., Gao Y., Sharma R., Hu E.L., DenBaars S.P., and Nakamura S. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett 84 (2004) 855
6. Na S.I., Ha G.Y., Han D.S., Kim S.S., Kim J.Y., Lim J.H., et al. Selective wet etching of p-GaN for efficient GaN-based light-emitting diodes. IEEE Photonics Technol Lett 18 (2006) 1512
7. Kim H., Cho J., Lee J.W., Yoon S., Kim H., Sone C., et al. Enhanced light extraction of GaN-based light-emitting diodes by using textured n-type GaN layers. Appl Phys Lett 90 (2007) 161110
8. Moustakas TD, Cabalu JS, Riyopoulus S. Physics of textured III-nitride quantum wells for applications to LEDs. Intl Semicon Dev Res Conf, MD, USA: Bethesda; 2005.
9. Huang S.H., Horng R.H., and Wuu D.S. Improvements of N-side-up GaN light-emitting diodes performance by indium-tin-oxide/Al mirror. Jpn J Appl Phys 45 (2006) 3449
10. Huang H.W., Kuo H.C., Chu J.T., Lai C.F., Kao C.C., Lu T.C., et al. Nitride-based LEDs with nano-scale textured sidewalls using natural lithograph. Nanotechnology 17 (2006) 2998
11. Oder T.N., Shakya J., Lin J.Y., and Jiang H.X. III-nitride photonic crystals. Appl Phys Lett 83 (2003) 1231
12. Cavalcante M.G., Farias G.A., and Maradudin A.A. Light scattering by thin films with a grating surface. J Opt Soc Am B 4 (1987) 1372
13. 1-x-yN quaternary alloys. Appl Phys Lett 80 (2002) 1397
14. Wang T., Liu Y.H., Lee Y.B., Ao J.P., Bai J., and Sakai S. 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Appl Phys Lett 81 (2002) 2508
15. Hao M., Zhang J., Zhang X.H., and Chua S. Photoluminescence studies on InGaN/GaN multiple quantum wells with different degree of localization. Appl Phys Lett 81 (2002) 5129
16. Yasan A., McClintock R., Mayes K., Kim D.H., Kung P., and Razeghi M. Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes. Appl Phys Lett 83 (2003) 4083
17. Schomig H., Halm S., Forchel A., and Bacher G. Probing individual localization centers in an InGaN/GaN quantum well. Phys Rev Lett 92 (2004) 106801-106802