GaN-based light-emitting diodes grown on photonic crystal-patterned sapphire substrates by nanosphere lithography

Japanese Journal of Applied Physics

Volumn 47, Issue 8 PART 2, 2008, Pages 6706-6708

  Su, Yan Kuin ^a   Chen, Jian Jhong ^a   Lin, Chuing Liang ^b   Chen, Shi Ming ^b   Li, Wen Liang ^a   Kao, Chien Chih ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Nanosphere lithography; Patterned sapphire substrate; Photonic crystal

Indexed keywords

CORUNDUM; CRYSTAL ATOMIC STRUCTURE; CRYSTAL STRUCTURE; DIODES; EPITAXIAL FILMS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOSPHERES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONIC CRYSTALS; POWDERS; SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES;

FORWARD VOLTAGES; GAN; INJECTION CURRENTS; LATTICE PATTERNS; LIGHT EMITTING DIODE LEDS; LIGHT-EMITTING DIODE (LED); LUMINANCE INTENSITIES; NANOSPHERE LITHOGRAPHIES; NANOSPHERE LITHOGRAPHY; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SAPPHIRE SUBSTRATES; PHOTONIC CRYSTAL STRUCTURES; SAPPHIRE SUBSTRATES;

GALLIUM ALLOYS;

EID: 55149094301     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.6706     Document Type: Article

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