Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Wuu, D S ^a   Wang, W K ^a   Wen, K S ^a   Huang, S C ^a   Lin, S H ^a   Huang, S Y ^a   Lin, C F ^a   Horng, R H ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; EPITAXIAL GROWTH; LIGHT EMISSION; QUANTUM ELECTRONICS; SAPPHIRE; ULTRAVIOLET RADIATION;

ETCH-PIT-DENSITY; SAPPHIRE TEMPLATE; ULTRAVIOLET EMITTERS;

GALLIUM NITRIDE;

EID: 33750179081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2363148     Document Type: Article

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