Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1812-1814

  Feng, Z H ^a   Lau, Kei May ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Cathodoluminescence (CL); Electroluminescence (EL); GaN; Grooved sapphire substrate; Light emitting diode (LED)

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ELECTROLUMINESCENCE; EPITAXIAL GROWTH; GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

BUFFER GROWTH; ENHANCED LUMINESCENCE; GROOVED SAPPHIRE SUBSTRATE; INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING;

LIGHT EMITTING DIODES;

EID: 27144445819     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.853233     Document Type: Article

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