Spin-coatable Hf O2 resist for optical and electron beam lithographies

Journal of Vacuum Science and Technology B

Volumn 28, Issue 1, 2010, Pages 90-95

  Saifullah, M S M ^a   Khan, M Z R ^b   Hasko, David G ^b   Leong, Eunice S P ^a   Neo, Xue L ^c   Goh, Eunice T L ^c   Anderson, David ^d   Jones, Geraint A C ^d   Welland, Mark E ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; ORGANIC SOLVENTS; SILICON ON INSULATOR TECHNOLOGY; SOL-GEL PROCESS; SOL-GELS;

BENZOYLACETONE; DIRECT-WRITING; ELECTRON-BEAM; ELECTRON-BEAM LITHOGRAPHY; HARDMASKS; MULTISTEPS; N-BUTANOL; OPTICAL BEAMS; PHOTOLITHOGRAPHY MASKS; TERT-BUTOXIDE;

GATE DIELECTRICS;

EID: 77949415451     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3273536     Document Type: Conference Paper

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