Characterization of a sol-gel based high- k dielectric field effect transistor for cryogenic operation

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1887-1891

  Khan, M Ziaur Rahman ^a   Hasko, D G ^a   Saifullah, M S M ^b   Welland, M E ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; COLLOIDS; CRYOGENICS; DRAIN CURRENT; ELECTRON BEAMS; FIELD EFFECT TRANSISTORS; FORCE MEASUREMENT; GATES (TRANSISTOR); GELATION; GELS; MICROWAVE IRRADIATION; MICROWAVES; MOS CAPACITORS; RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS; SOL-GELS; SOLS;

CONTINUOUS WAVES; CRYOGENIC OPERATIONS; CRYOGENIC TEMPERATURES; DEVICE OPERATIONS; DIELECTRIC LAYERS; GATE LEAKAGE CURRENTS; HIGH-K DIELECTRICS; INFORMATION PROCESSING; ROOM TEMPERATURES; SILICON ON INSULATORS; SINGLE ELECTRONS; TEMPERATURE DEPENDENCES; TRANSISTOR CHARACTERISTICS;

GATE DIELECTRICS;

EID: 56249097981     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3006019     Document Type: Article

References (21)

1. Device and Circuit Cryogenic Operation for Low Temperature Electronics, edited by, F. Balestra, and, G. Ghibaudo, (Kluwer Academic, Netherlands, 2001).
2. R. Vrijen, E. Yablonovitch, K. Wang, H. W. Jiang, A. Balandin, V. Roychowdhury, T. Mor, and D. DiVincenzo, Phys. Rev. A 1050-2947 10.1103/PhysRevA.62.012306 62, 012306 (2000).
3. L. K. Grover, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.79.325 79, 325 (1997).
4. R. P. Feynman, Int. J. Theor. Phys. 0020-7748 10.1007/BF02650179 21, 467 (1982).
5. M. Fujishima, K. Saito, and K. Hohy, Jpn. J. Appl. Phys., Part 1 42, 2182 (2003). 0021-4922
6. J. Gorman, D. G. Hasko, and D. A. Williams, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.090502 95, 090502 (2005).
7. E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, and M. Sampietro, Phys. Lett. A 0375-9601 10.1016/j.physleta.2007.05.086 370, 491 (2007).
8. E. Prati, M. Fanciulli, A. Calderoni, G. Ferrari, and M. Sampietro, J. Appl. Phys. 0021-8979 10.1063/1.2924407 103, 104502 (2008).
9. E. Prati, M. Fanciulli, G. Ferrari, and M. Sampietro, J. Appl. Phys. 0021-8979 10.1063/1.2939272 103, 123707 (2008).
10. E. Prati and M. Fanciulli, Phys. Lett. A 372, 3102 (2008). 0375-9601
11. M. Xiao, I. Martin, E. Yablonovitch, and H. W. Jiang, Nature (London) 0028-0836 10.1038/nature02727 430, 435 (2004).
12. I. Martin, D. Mozyrsky, and H. W. Jiang, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.90.018301 90, 018301 (2003).
13. C. O. Chui, S. Ramanathan, B. B. Triplett, P. C. McIntyre, and K. C. Saraswat, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2002.801319 23, 473 (2002).
14. G. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 0021-8979 10.1063/1.1361065 89, 5243 (2001).
15. J. P. Locquet, C. Marchiori, M. Sousa, and J. Fompeyrine, J. Appl. Phys. 0021-8979 10.1063/1.2336996 100, 051610 (2006).
16. Y. -Z. Hu and S. -P. Tay, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1406151 19, 1706 (2001).
17. S. A. Campbell, H. -S. Kim, D. C. Gilmer, B. He, T. Ma, and W. L. Gladfelter, IBM J. Res. Dev. 43, 383 (1999). 0018-8646
18. M. S. M. Saifullah, K. R. V. Subramanian, E. Tapley, D. -J. Kang, M. E. Welland, and M. Butler, Nano Lett. 1530-6984 10.1021/nl034584p 3, 1587 (2003).
19. E. Prati, M. Fanciulli, G. Ferrari, and M. Sampietro, Phys. Rev. B 0163-1829 10.1103/PhysRevB.74.033309 74, 033309 (2006).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
21. R. Mahapatra, J. Vac. Sci. Technol. 25, 217 (2007). 0022-5355