Improvement of high resolution lithography by using amorphous carbon hard mask

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 800-804

  Pauliac Vaujour, S ^a   Brianceau, P ^a   Comboroure, C ^b   Faynot, O ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Amorphous carbon; e Beam; Hybrid lithography

Indexed keywords

AMORPHOUS CARBON; ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; GATES (TRANSISTOR); OPTICAL RESOLVING POWER;

E-BEAMS; HIGH RESOLUTION LITHOGRAPHY; TRANSISTOR GATES;

MASKS;

EID: 44149115438     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.02.007     Document Type: Article

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