High-κ dielectrics and advanced channel concepts for Si MOSFET

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 10, 2008, Pages 915-951

  Wu, Mo ^a   Alivov, Y I ^a   Morkoç, Hadis ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC THICKNESSES; GA TE LENGTHS; GATE DIELECTRIC THICKNESS; SI(111) MOSFET;

DIELECTRIC MATERIALS; GATES (TRANSISTOR); SILICON COMPOUNDS;

GATE DIELECTRICS;

EID: 47049128199     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9713-2     Document Type: Review

References (181)

1. G.E. Moore, Daedelus 125, 55 (1964); G.E. Moore, Cramming more components onto integrated circuits. Electronics 38, 114-116 (1965)
2. P.M. Solomon, Device innovation and material challenges at the limits of CMOS technology. Annu. Rev. Mater. Sci. 30, 645-680 (2000)
3. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 89, 5243 (2001). doi: 10.1063/1.1361065
4. R.M.C. de Almeida, I.J.R. Baumvol, Surf. Sci. Rep. 49, 1 (2003). doi: 10.1016/S0167-5729(02)00113-9
5. R.M. Wallace, G.D. Wilk, Highκ dielectric materials for microelectronics. Crit. Rev. Solid State Mater. Sci. 28, 231 (2003). doi: 10.1080/714037708
6. M. Czernohorsky, E. Bugiel, H.J. Osten, A. Fissel, O. Kirfel, Appl. Phys. Lett. 88, 152905 (2006). doi: 10.1063/1.2194227
7. L. Yan, C.M. Lopez, R.O. Shrestha, E.A. Irene, A.A. Suvorova, M. Saunders, Appl. Phys. Lett. 88, 142901 (2006). doi: 10.1063/1.2191419
8. S. Chen, Y. Zhu, R. Xu, Y.Q. Wu, X.J. Yang, Y.L. Fan, Z.M. Jiang, J. Zou, Appl. Phys. Lett. 88, 222902 (2006). doi: 10.1063/1.2208958
9. A. Fissel, Z. Elassar, O. Kirfel, E. Bugiel, M. Czernohorsky, H.J. Osten, J. Appl. Phys. 99, 074105 (2006). doi: 10.1063/1.2188051
10. T. Busani, R.A.B. Devine, J. Appl. Phys. 98, 044102 (2005). doi: 10.1063/ 1.2012513
11. Y. Nishikava, T. Yamaguchi, M. Yoshiki, H. Satake, N. Fukushima, Appl. Phys. Lett. 81, 4386 (2002). doi: 10.1063/1.1526169
12. J.S. Suehle, E.M. Vogel, M.D. Edelstein, C.A. Richter, N.V. Nguyen, I. Levin, D.L.. Kaiser, H. Wu, J.B. Bemstein, Challenges of high-κ gate dielectrics for future MOS devices, in Sixth International Symposium on Plasma Process-Induced Damage, Monterey, CA, 13-15 May 2001, p. 90
13. S. Guha, E. Cartier, M.A. Gribelyuk, N.A. Bojarczuk, M.C. Copel, Appl. Phys. Lett. 77, 2710 (2000). doi: 10.1063/1.1320464
14. Y.H. Wu, M.Y. Yang, C.M. Kwei, IEEE Electron Device Lett. 21, 341 (2000). doi: 10.1109/55.847374
15. J. Kwo, M. Hong, A.R. Kortan, K.T. Queeney, Y.J. Chabal, J.P. Mannaerts, T. Boone, J.J. Krajewski, A.M. Sergent, J.M. Rosamilia, Appl. Phys. Lett. 77, 130 (2000). doi: 10.1063/1.126899
16. J.L. Autran, R. Devine, C. Chaneliere, B. Ballard, IEEE Electron Device Lett. 18, 447 (1997). doi: 10.1109/55.622525
17. D. Pach, Y.C. King, Q. Lu, T.J. King, C. Hu, A. Kalnitsky, S.P. Tay, C.C. Cheng, IEEE Electron Device Lett. 19, 441 (1998). doi: 10.1109/ 55.728906
18. S.A. Campbell, D.C. Gilmer, X.C. Wang, M.T. Hsieh, H.S. Kim, W.L. Gladfelter, J. Yan, IEEE Trans. Electron Device Lett. 44, 104 (1997). doi: 10.1109/16.554800
19. M. Copel, M. Giberyuk, E. Gusev, Appl. Phys. Lett. 76, 436 (2000). doi: 10.1063/1.125779
20. W.J. Qi, R. Neih, E. Dharmarajan, B.H. Lee, Y. Jeon, L. Kang, K. Onishi, J.C. Lee, Appl. Phys. Lett. 77, 1704 (2000). doi: 10.1063/1.1308535
21. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T.P. Ma, IEEE Electron Device Lett. 23, 649 (2002). doi: 10.1109/LED.2002.805000
22. B.H. Lee, L. Kang, R. Neeh, W.J. Qi, J.C. Lee, Appl. Phys. Lett. 76, 1926 (2000). doi: 10.1063/1.126214
23. G.D. Wilk, R.M. Wallace, J.M. Anthony, J. Appl. Phys. 87, 484 (2000). doi: 10.1063/1.371888
24. J. Robertson, B. Falabretti, Mater. Sci. Eng. B 135, 267 (2006). doi: 10.1016/j.mseb.2006.08.017
25. V.V. Afanas'ev, A. Stesmans, Appl. Phys. Lett. 84, 2319 (2004). doi: 10.1063/1.1688453
26. A. Dimoulas, G. Mavrou, G. Vellianitis, E. Evangelou, N. Boukos, M. Houssa, M. Caymax, Appl. Phys. Lett. 86, 032908 (2005). doi: 10.1063/ 1.1854195
27. A. Deshpande, R. Inman, G. Jursich, C.G. Takoudis, J. Appl. Phys. 99, 094102 (2006). doi: 10.1063/1.2191434
28. H. Kim, C.O. Chui, K.C. Saraswat, P.C. McIntyre, Appl. Phys. Lett. 83, 2647 (2003). doi: 10.1063/1.1613031
29. E. Rauwel, C. Dubourdieu, B. Holländer, N. Rochat, F. Ducroquet, M.D. Rossell, G. Van Tendeloo, B. Pelissier, Appl. Phys. Lett. 89, 012902 (2006). doi: 10.1063/1.2216102
30. S. Chakraborty, M.K. Bera, C.K. Maiti, P.K. Bose, J. Appl. Phys. 100, 023706 (2006). doi: 10.1063/1.2218031
31. H. Hu, C. Zhu, Y.F. Lu, Y.H. Wu, T. Liew, M.F. Li, B.J. Cho, W.K. Choi, N. Yakovlev, J. Appl. Phys. 94, 551 (2003). doi: 10.1063/1.1579550
32. S. Ferrari, S. Spiga, C. Wiemer, M. Fanciulli, A. Dimoulas, Appl. Phys. Lett. 89, 122906 (2006). doi: 10.1063/1.2349320
33. Z.J. Yan, R. Xu, Y.Y. Wang, S. Chen, Y.L. Fan, Z.M. Jiang, Appl. Phys. Lett. 85, 85 (2005). doi: 10.1063/1.1767604
34. L. Niinistö, J. Päiväsaari, J. Niinistö, M. Putkonen, M. Nieminen, Phys. Stat. Sol. (A), 201, 1443 (2004)
35. T.S. Suntola, A.J. Pakkala, S.G. Lindfors, Method for performing growth of compound thin films. US Patent 4,413,022 (1983)
36. M. Ritala, M. Leskalä, Appl. Surf. Sci. 75, 333 (1994). doi: 10.1016/0169-4332(94)90180-5
37. K. Kukli, K. Forsgren, J. Aarik, A. Aidla, T. Uutare, M. Ritala, A. Niskanan, M. Leskalä, A. Härsta, J. Cryst. Growth 231, 262 (2001). doi: 10.1016/S0022-0248(01)01449-X
38. J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, V. Sammelselg, Thin Solid Films. 340, 110 (1999). doi: 10.1016/S0040-6090(98)01356-X
39. M. Cho, J. Park, H.B. Park, C.S. Hwang, J. Jeong, K.S. Hyun, Appl. Phys. Lett. 81, 334 (2002). doi: 10.1063/1.1492320
40. K. Kukli, M. Ritala, M. Leskela, T. Sajavaara, J. Keinonen, A.C. Jones, J.L. Roberts, Atomic layer deposition of hafnium dioxide films from 1-methoxy-2-methyl-2-propanolate complex of hafnium. Chem. Mater. 15, 1722 (2003). doi: 10.1021/cm021328p
41. 3 laminate capacitor technology using Hf liquid precursor for sub-100 nm DRAMs, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, pp. 221-224
42. K. Kukli, M. Ritala, T. Pilvi, T. Sajavaara, M. Leskela, A.C. Jones, H.C. Aspinall, D.C. Gilmer, P.J. Tobin, Chem. Mater. 16, 5162 (2004). doi: 10.1021/cm0401793
43. N. Wakiya, S.-Y. Chun, A. Saiki, O. Sakurai, K. Shinozaki, N. Mizutani, Thermochim. Acta 313, 55 (1998). doi: 10.1016/S0040-6031(98)00242-1
44. R.D. Shannon, J. Appl. Phys. 73, 348 (1993). doi: 10.1063/1.353856
45. T. Tsutsumi, Jpn. J. Appl. Phys. 9, 735 (1970). doi: 10.1143/JJAP.9.735
46. R.K. Sharma, A. Kumar, J.M. Anthony, JOM 53, 53 (2001). doi: 10.1007/ s11837-001-0105-9
47. J. Päiväsaari, M. Putkonen, L. Niinistä, Thin Solid Films 472, 275 (2005). doi: 10.1016/j.tsf.2004.06.160
48. M. Nieminen, S. Lehto, L. Niinistä, J. Mater. Chem. 11, 3148 (2001). doi: 10.1039/b105978p
49. M. Ratzke, M. Kappa, D. Wolfframm, S. Kouteva-Arguirova, J. Reif, PLD of high-κ dielectric films on silicon, in 5th International Symposium on Laser Precision Microfabrication, vol. 5662, Nara Japan, 11-14 May 2004, pp. 406-411
50. E. Desbiens, M.A. El Khakani, J. Appl. Phys. 94, 5969 (2003). doi: 10.1063/1.1616636
51. E. Desbiens, R. Dolbec, M.A. El Khakani, J. Vac. Sci. Technol. A 20, 1157 (2002). doi: 10.1116/1.1467357
52. J. Zhu, Z.G. Liu, M. Zhu, G.L. Yuan, J.M. Liu, Appl. Phys. A 80, 321 (2005). doi: 10.1007/s00339-003-2187-4
53. S. Kitai, O. Maida, T. Kanashima, M. Okuyama, Jpn. J. Appl. Phys. 42, 247 (2003). doi: 10.1143/JJAP.42.247
54. S. Van Elshocht, M. Baklanov, B. Brijs, R. Carter, M. Caymax, L. Carbonell, M. Claes, T. Conard, V. Cosnier, L. Date, S. De Gendt, J. Kluth, D. Pique, O. Richard, D. Vanhaeren, G. Vereecke, T. Witters, C. Zhao, M. Heynsa, J. Electrochem. Soc. 151, F228 (2004). doi: 10.1149/ 1.1784822
55. P.A. Marshall, R.J. Potter, A.C. Jones, P.R. Chalker, S. Taylor, G.W. Critchlow, S.A. Rushworth, Chem. Vap. Deposition 10, 275 (2004). doi: 10.1002/cvde.200306301
56. Y. Senzaki, A.K. Hochberg, J.T. Norman, Adv. Mater. Opt. Electron. 10, 93 (2000). doi: 10.1002/1099-0712(200005/10)10:3/ 5<93::AID-AMO403>3.0.CO;2-Q
57. A. Bastianini, G.A. Battiston, R. Gerbasi, M. Porchia, S. Daolio, J. Phys. IV. C5, 525 (1995)
58. B.C. Hendrix, A.S. Borovik, C. Xu, J.F. Roeder, T.H. Baum, M.J. Bevan, M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, H. Bu, L. Colombo, Appl. Phys. Lett. 80, 2362 (2002). doi: 10.1063/1.1465532
59. S. Chakraborty, M.K. Bera, P.K. Bose, C.K. Maiti, Semicond. Sci. Technol. 21, 335 (2006)
60. 2 Nano-thin Films Grown by Laser MBE for Gate Dielectric Application, in 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 10-13 January 2006, pp. 273-277
61. J.-H. Hong, T.-H. Moon, J.-M. Myoung, Microelect. Eng. 75, 263 (2004). doi: 10.1016/j.mee.2004.05.008
62. G. Vellianitis, G. Apostolopoulos, G. Mavrou, K. Argyropoulos, A. Dimoulas, J.C. Hooker, T. Conard, M. Butcher, Mater. Sci. Eng. B 109, 85 (2004). doi: 10.1016/j.mseb.2003.10.052
63. J. Kwo, B.W. Busch, D.A. Muller, M. Hong, Y.J. Chabal, L. Manchanda, A.R. Kortan, J.P. Mannaerts, T. Boone, W.H. Schulte, E. Garfunkel, T. Gustafsson, Advances in high κ gate dielectrics for Si and III-V semiconductors, in 2002 IEEE International MBE Conference, 15-20 September 2002, pp. 47-48
64. J. Kwo, M. Hong, A.R. Kortan, K.L. Queeney, Y.J. Chabal, R.L. Opila Jr., D.A. Muller, S.N.G. Chu, B.J. Sapjeta, T.S. Lay, J.P. Mannaerts, T. Boone, H.W. Krautter, J.J. Krajewski, A.M. Sergnt, J.M. Rosamilia, J. Appl. Phys. 89, 3920 (2001). doi: 10.1063/1.1352688
65. G. Vellianitis, G. Apostolopoulos, G. Mavrou, K. Argyropoulos, A. Dimoulas, J.C. Hooker, T. Conard, M. Butcher, Mater. Sci. Eng. B. 109, 85 (2004). doi: 10.1016/j.mseb.2003.10.052
66. y advanced gate dielectrics with poly-Si gate electrode, in IEDM Technical Digest, San Francisco, CA, 8-11 December 2002, pp. 857-860
67. 2 plasma, in Electrochemical Society Proceedings, vol. 4, Dielectrics for Nanosystems: Materials Science, Processing, Reliability, and Manufacturing - Proceedings of the First International Symposium, Honolulu, HI, Fall April 2004, pp. 464-469
68. K.J. Choi, J.H. Kim, S.G. Yoon, Electrochem. Solid-State Lett. 7, F59 (2004). doi: 10.1149/1.1795055
69. J.C. Wang, D.C. Shie, T.F. Lei, C.L. Lee, Electrochem. Solid-State Lett. 6, F34 (2003). doi: 10.1149/1.1605272
70. N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. Arikado, Appl. Phys. Lett. 86, 143507 (2005). doi: 10.1063/1.1899232
71. A.P. Huang, R.K.Y. Fu, P.K. Chua, L. Wang, W.Y. Cheung, J.B. Xu, S.P. Wong, J. Cryst. Growth 277, 422 (2005). doi: 10.1016/ j.jcrysgro.2005.01.088
72. th control and its impact on reliability for poly-Si gate pFET, in IEDM Technical Digest, Washington, DC, 5-7 December 2005, pp. 413-416
73. 2) reliability by incorporation of fluorine, in IEDM Technical Digest, Washington, DC, 5-7 December 2005, pp. 417-420
74. y gate for improved device performance and reliability, in IEDM Technical Digest, Washington, DC, 5-7 December 2005, pp. 35-38
75. K. Tse, J. Robertson, Appl. Phys. Lett. 89, 142914 (2006). doi: 10.1063/ 1.2360190
76. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T.P. Ma, IEEE Electron Device Lett. 23, 649 (2003). doi: 10.1109/LED.2002.805000
77. S.H. Bae, C.H. Lee, R. Clark, D.L. Kwong, IEEE Electron Device Lett. 24, 556 (2003). doi: 10.1109/LED.2003.816578
78. 2/Si system, in Silicon Nitride and Silicon Dioxide Thin Insulating Films and Other Emerging Dielectrics VIII (Electrochemical Society, Piscataway, 2005), p. 471
79. 2 nanocrystal memory using spinodal phase separation of hafnium silicate, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, pp. 1080-1082
80. E.P. Gusev, E. Cartier, D.A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, C. D'Emic, Microelect. Eng. 59, 341 (2001). doi: 10.1016/ S0167-9317(01)00667-0
81. A. Toriumi, K. Kita, Material engineering of high-κ gate dielectrics, in Dielectric Films for Advanced Microelectronics, ed. by M. Baklanov, K. Maex, M. Green (Wiley, Chichester, UK, 2007), p. 325
82. J.J. Chambers, A.L.P. Rotondaro, M.J. Bevan, M.R. Visokay, L. Colombo, Effect of composition and post-deposition annealing on the etch rate of hafnium and zirconium silicates in dilute HF, in Proceedings of the Seventh International Symposium on Cleaning Technology in Semiconductor Device Manufacturing (The Electrochemical Society Proceedings, 2001), p. 359
83. P.S. Lysaght, P.J. Cben, R. Bergmann, T. Messina, R.W. Murto, H.R. Huff, J. Non-Cryst. Solids. 303, 54 (2002). doi: 10.1016/S0022-3093(02)00964-X
84. K.L. Saenger, H.F. Okorn-Schmidt, C.P. D'Emic, Mater. Res. Soc. Symp. Proc. 745, 79 (2002)
85. S.K. Han, I. Kim, G.P. Heuss, H. Zhong, V. Misra, C.M. Osburn, Etching of high-κ gate dielectric and gate metal electrode candidates. https://www.electrochem.org/dl/ma/201/pdfs/0420.pdf
86. L. Sha, R. Puthenkovilakam, Y.-S. Lin, J.P. Chang, J. Vac. Sci. Technol. B 21, 2420 (2003). doi: 10.1116/1.1627333
87. K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. Ono, Vacuum 80, 761 (2006). doi: 10.1016/j.vacuum.2005.11.017
88. J. Chen, W.J. Yoo, Z.Y.L. Tan, Y. Wang, D.S.H. Chan, J. Vac. Sci. Technol. A 22, 1552 (2004). doi: 10.1116/1.1705590
89. S. Norasetthekul, P.Y. Park, K.H. Baik, K.P. Lee, J.H. Shin, B.S. Jeong, V. Shishodia, D.P. Norton, S.J. Pearton, Appl. Surf. Sci. 187, 75 (2002). doi: 10.1016/S0169-4332(01)00792-9
90. K. Pelhos, V.M. Donnelly, A. Kornblit, M.L. Green, R.B. Van Dover, L. Manchanda, Y. Hu, M. Morris, E. Bower, J. Vac. Sci. Technol. A 19, 1361 (2001). doi: 10.1116/1.1349721
91. D.A. Neumayer, E. Cartier, J. Appl. Phys. 90, 1801 (2001). doi: 10.1063/ 1.1382851
92. S. Guha, E.P. Gusev, M. Copel, L.-Å Ragnarsson, D.A. Buchanan, Mater. Res. Soc. Bull. 27, 226 (2002)
93. W.J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, T.P. Ma, IEEE Electron Device Lett. 23, 649 (2002). doi: 10.1109/LED.2002.805000
94. N.V. Nguyen, M.M. Frank, A.V. Davydov, D. Chandler-Horowitz, Appl. Phys. Lett. 87, 192903 (2005). doi: 10.1063/1.2126136
95. M.V. Fischetti, D.A. Neumayer, E.A. Cartier, J. Appl. Phys. 90, 4587 (2001). doi: 10.1063/1.1405826
96. L. Yang, J.R. Watling, J.R. Barker, A. Asenov, in Physics of Semiconductors, vol. 27, ed. by J. Menedez, C.G. Van de Walle (AIP Press, 2005), p. 1497
97. Z. Ren, M. Fischetti, E.P. Gusev, E. Cartier, M. Chudzik, Inversion channel mobility in high-κ high performance MOSFETs, in IEDM Technical Digest (2003), pp. 793-796
98. E.P. Gusev, D.A. Buchanan, P. Jamison, T.H. Zabel, M. Copel, Microelectron. Eng. 48, 67 (1999). doi: 10.1016/S0167-9317(99)00340-8
99. C.C. Hobbs, L.R. C. Fonseca, A. Knizhnik, V. Dhandapani, S.B. Samavedam, W.J. Taylor, J.M. Grant, L.G. Dip, D.H. Triyoso, R.I. Hegde, D.C. Gilmer, R. Garcia, D. Roan, M.L. Lovejoy, R.S. Rai, E.A. Hebert, H.H. Tseng, S.G.H. Anderson, B.E. White, P.J. Tobin, IEEE Trans. Electron Device 51, 971 (2004). doi: 10.1109/TED.2004.829513
100. C.C. Hobbs, L.R.C. Fonseca, A. Knizhnik, V. Dhandapani, S.B. Samavedam, W.J. Taylor, J.M. Grant, L.G. Dip, D.H. Triyoso, R.I. Hegde, D.C. Gilmer, R. Garcia, D. Roan, M.L. Lovejoy, R.S. Rai, E.A. Hebert, H.H. Tseng, S.G.H. Anderson, B.E. White, P.J. Tobin, IEEE Trans. Electron Device 51, 978 (2004). doi: 10.1109/TED.2004.829510
101. W.S. Kim, S. Kamiyama, T. Aoyama, H. Itoh, T. Maeda, T. Kawahara, K. Torii, H. Kitajima, T. Arikado, Depletion-free poly-Si gate high-κ CMOSFETs, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, pp. 833-836
102. M.M. Frank, V.K. Paruchuri, V. Narayanan, N. Bojarczuk, B. Linder, S. Zafar, E.A. Cartier, E.P. Gusev, P.C. Jamison, K.-L. Lee, M.L. Steen, M. Copel, S.A. Cohen, K. Maitra, X. Wang, P.M. Kozlowski, J.S. Newbury, D.R. Medeiros, P. Oldiges, S. Guha, R. Jammy, M. Ieong, G. Shahidi, Poly-Si/high-κ gate stacks with near-ideal threshold voltage and mobility, in IEEE VLSI-TSA-Tech, International Symposium on VLSI Technology, San Francisco, CA, 13-15 December 2004, pp. 97-98
103. A. Chatterjee, R.A. Chapman, K. Joyner, M. Otobe, S. Hattangady, M. Bevan, G.A. Brown, H. Yang, Q. He, D. Rogers, D. Fang, S.J. Kraft, R. Rotondaro, A.L.P. Terry, M. Brennan, K. Aur, S.-W. Hu, J.C. Tsai, H.-L. Jones, P. Wilk, G. Aoki, M. Rodder, M. Chen, I.-C., CMOS metal replacement gate transistors using tantalum pentoxide gate insulator, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, p. 777
104. 2 gate stacks, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, p. 825
105. D.J. Paul, Semicond. Sci. Technol. 19, R75-R108 (2004). doi: 10.1088/ 0268-1242/19/10/R02
106. B.H. Lee, A. Mocuta, S. Bedell, H. Chen, D. Sadana, K. Rim, P. O'Neil, R. Mo, K. Chan, C. Cabral, C. Lavoie, D. Mocuta, A. Chakravarti, R.M. Mitchell, J. Mezzapelle, F. Jamin, M. Sendelbach, H. Kermel, M. Gribelyuk, A. Domenicucci, K.A. Jenkins, S. Narasimha, S.H. Ku, M. Ieong, I.Y. Yang, E. Leobandung, P. Agnello, W. Haensch, J. Welser, Performance enhancement on sub-70 nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator (TM-SGOI) substrate with raised S/D, in IEDM Technical Digest, San Francisco, CA, 8-11 December 2002, pp. 946-948
107. K. Rim, K. Chan, L. Shi, L. Boyd, D. Ott, J. Klymko, N. Cardone, F. Tai, L. Koester, S. Cobb, M. Canaperi, D. To, B. Duch, E. Babich, I. Carruthers, R. Saunders, P. Walker, G. Zhang, Y. Steen, M. Ieong, Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs, in IEDM Technical Digest, Washington, DC, 8-10 December 2003, pp. 49-52
108. S. Ito, H. Namba, K. Yamaguchi, T. Hirata, K. Ando, S. Koyama, S. Kuroki, N. Ikezawa, T. Suzuki, T. Saitoh, T.Horiuchi, Mechanical stress effect of etch-stop nitride and its impact on deep submicron transistor design, in IEDM Technical Digest, San Francisco, CA, 10-13 December 2000, pp. 247-250
109. K. Ota, K. Sugihara, H. Sayama, T. Uchida, H. Oda, T. Eimori, H. Morimoto, Y. Inoue, Novel locally strained channel technique for high performance 55 nm CMOS, in IEDM Technical Digest, San Francisco, CA, 8-11 December 2002, pp. 27-30
110. V. Chan, K. Rim, M. Ieong, S. Yang, R. Malik, Y. W. Teh, M. Yang, Q. (Christine) Ouyang, in IEEE 2005 Custom Integrated Circuits Conference, 18-21 September 2005, pp. 667-674
111. P. Bai, C. Auth, S. Balakrishnan, M. Bost, R. Brain, V. Chikarmane, R. Heussner, M. Hussein, J. Hwang, D. Ingerly, R. James, I. Jeong, C. Kenyan, E. Lee, S.-H. Lee, N. Lindert, M. Liu, Z. Ma, T. Marieb, A. Murthy, R. Nagisetty, S. Natarajan, J. Neirynck, A. Ott, C. Parker, J. Sebastian, R. Shaheed, S. Sivakumar, J. Steigenvald, S. Tyagi, C. Weber, B. Woolel, A. Yeoh, K. Zhang, M. Bohr, A 65 nm logic technology featuring 35 nm gate lengths, enhanced channel strain, 8 Cu interconnect layers, low-κ ILD and 0.57 μm 2 SRAM cell, in IEDM Technical Digest, San Francisco, CA, 13-15 December 2004, pp. 657-660
112. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005). doi: 10.1063/1.1819976
113. K. Rim, J.L. Hoyt, J.F. Gibbons, IEEE Trans. Electron Device 47, 1406 (2000). doi: 10.1109/16.848284
114. K. Rim, S. Narasimha, M. Longstreet, A. Mocuta, J. Cai, Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs, in IEDM Technical Digest, San Francisco, CA, 8-11 December 2002, pp. 43-46
115. H.M. Nayfeh, C.W. Leitz, A.J. Pitera, E.A. Fitzgerald, J.L. Hoyt, D.A. Antoniadis, IEEE Electron Device Lett. 24, 248 (2003). doi: 10.1109/ LED.2003.810885
116. Q. Xiang, J.-S. Goo, J. Pan, B. Yu, S. Ahmed, J. Zhang, M.R. Lin, Strained silicon NMOS with nickel-silicide metal gate, in Symposium on VLSI Technology Digest of Technical Papers, Kyoto, Japan, 9-12 June 2003, pp. 101-102
117. H.C.-H. Wang et al., Substrate-strained silicon technology: Process integration, in IEDM Technical Digest, Washington, DC, 8-10 December 2003, pp. 61-64
118. K. Rim, J.L. Hoyt, J.F. Gibbons, Transconductance enhancement in deep submicron strained Si n-MOSFETs, in IEDM Technical Digest, San Francisco, CA, 6-9 December 1998, pp. 707-710
119. D.K. Nayak, K. Goto, A. Yutani, J. Murota, Y. Shiraki, IEEE Trans. Electron Device 43, 1709 (1996). doi: 10.1109/16.536817
120. D.K. Sadana, IBM, III-V Substrate Engineering, 4 December 2005
121. D. Bodlaki, H. Yamamoto, D.H. Waldeck, E. Borguet, Surf. Sci. 543, 63 (2003). doi: 10.1016/S0039-6028(03)00958-0
122. X.-J. Zhang, G. Xue, A. Agarwal, R. Tsu, M.-A. Hasan, J.E. Greene, A. Rockett, J. Vac. Sci. Technol. A. 11, 2553 (1993). doi: 10.1116/1.578606
123. J.J.-H. Chen, N. Bojarczuk, H. Shang, M. Copel, J. Hannon, J. Karasinski, E. Preisler, S.K. Banerjee, S. Guha, IEEE Trans. Electron Device 51, 1441 (2004). doi: 10.1109/TED.2004.833593
124. E.P. Gusev, H. Shang, M. Copel, M. Gribelyuk, C. D'Emic, P. Kozlowski, T. Zabel, Appl. Phys. Lett. 85, 2334 (2004). doi: 10.1063/1.1794849
125. T. Conard, H. Bender, W. Vandervorst, Physical characterisation of ultra-thin high-κ dielectric, in Dielectric Films for Advanced Microelectronics, ed. by M. Baklanov, K. Maex, M. Green (Wiley, Chichester, UK, 2007), p. 342
126. N. Wu, Q. Zhang, C. Zhu, C. Yeo, S.J. Whang, D.S.H. Chan, M.F. Li, A. Chin, D.L. Kwong, A.Y. Du, C.H. Tung, N. Balasubramanian, Appl. Phys. Lett. 85, 4127 (2004). doi: 10.1063/1.1812835
127. D.J. Hymes, J.J. Rosenberg, J. Electrochem. Soc. 135, 961 (1988). doi: 10.1149/1.2095851
128. C.O. Chui, F. Ito, K.C. Saraswat, IEEE Electron Device Lett. 25, 613 (2004). doi: 10.1109/LED.2004.833830
129. H. Shang, M.M. Frank, E.P. Gusev, J.O. Chu, S.W. Bedell, K.W. Guarini, M. Ieong, IBM J. Res. Dev. 50 (4/5), 377-386 (2006)
130. H. Shang, H. Okorn-Schmidt, K.K. Chan, M. Copel, J.A. Ott, P.M. Kozlowski, S.E. Steen, S.A. Cordes, H.-S.P. Wong, E.C. Jones, W.E. Haensch, IEEE Electron Device Lett. 24, 242-244 (2003). doi: 10.1109/ LED.2003.810879
131. X. Chen, S. Joshi, J. Chen, T. Ngai, S. Banerjee, IEEE Trans. Electron Device 51, 1532 (2004). doi: 10.1109/TED.2004.833957
132. N. Wu, Q. Zhang, C. Zhu, D.S. H. Han, A. Du, N. Balasubramanian, M.F. Li, A. Chin, J.K. O. Sin, D.-L. Kwong, IEEE Electron Device Lett. 25, 631 (2004). doi: 10.1109/LED.2004.833842
133. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, A sub-400°C germanium MOSFET technology with high-κ dielectric and metal gate, in IEDM Technical Digest, San Francisco, CA, 8-11 December 2002, p. 437
134. H. Shang, E. Gousev, M. Gribelyuk, J.O. Chu, P.M. Mooney, X. Wang, K.W. Guarini, M. Ieong, Fabrication, device design and mobility enhancement of germanium channel MOSFETs, in Proceedings of the International Conference on Solid State and Integrated Circuits Technology (ICSICT), Beijing, China, 18-21 October 2004, pp. 306-309
135. 2 gate dielectrics and TaN gate electrode, in Symposium on VLSI Technology, 10-12 June 2003, pp. 121-122
136. 3/Ge-on-insulator MOSFETs, in IEDM Technical Digest, Washington, DC, 8-10 December 2003, pp. 319-322
137. T. Krishnamohan, Z. Krivokapic, K. Uchida, Y. Nishi, K.C. Saraswat, IEEE Trans. Electron Device 53, 990 (2006). doi: 10.1109/TED.2006.872362
138. M.L. Lee, E.A. Fitzgerald, in IEDM Technical Digest, Washington, DC, 8-10 December 2003, pp. 429-432
139. C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng, D.A. Antoniadis, E.A. Fitzgerald, Appl. Phys. Lett. 79, 4246 (2001). doi: 10.1063/1.1423774
140. R.J.P. Lander, Y.V. Ponomarev, J.G.M. van Berkum, W.B. de Boer, IEEE Trans. Electron Device 48, 1826 (2001). doi: 10.1109/16.936714
141. M.L. Lee, E.A. Fitzgerald, M.T. Bulsara, M.T. Currie, A. Lochtefeld, J. Appl. Phys. 97, 011101 (2005). doi: 10.1063/1.1819976
142. O. Weber, Y. Bogumilowica, T. Ernst, J.-M. Hartmann, F. Ducroquet, F. Andrieu, C. Dupre, L. Clavelier, C. Le Royer, N. Cherkashin, M. Hytch, D. Rouchon, H. Dansas, A.-M. Papon, V. Carron, C. Tabone, S. Deleonibus, Strained Si and Ge MOSFETs with high-κ/metal gate stack for high mobility dual channel CMOS, in IEDM Technical Digest, Washington, DC, 5-7 December 2005, pp. 137-140
143. S.J. Koester, R. Hammond, J.O. Chu, P.M. Mooney, J.A. Ott, L. Perraud, K.A. Jenkins, C.S. Webster, I. Lagnado, P.R. de la Houssaye, IEEE Electron Device Lett. 22, 92 (2001). doi: 10.1109/55.902842
144. M. Arafa, K. Ismail, J.O. Chu, B.S. Meyerson, I. Adesida, IEEE Electron Device Lett. 17, 586 (1996). doi: 10.1109/55.545779
145. S.J. Koester, R. Hammond, J.O. Chu, P.M. Mooney, J.A. Ott, L. Perraud, K.A. Jenkins, C.S. Webster, I. Lagnado, P.R. de la Houssaye, IEEE Electron Device Lett. 22, 92 (2001). doi: 10.1109/55.902842
146. S.J. Koester, R. Hammond, J.O. Chu, IEEE Electron Device Lett. 21, 110 (2000). doi: 10.1109/55.823572
147. S. Fang, K. Adomi, S. Iyer, H. Morkoç, H. Zabel, C. Choi, N. Otsuka, J. Appl. Phys. Rev. 68, R31 (1990). doi: 10.1063/1.346284
148. R. Houdre, H. Morkoç, Solid-State Mater. Sci. 16, 91 (1990)
149. R. Fisher, H. Morkoç, D.A. Neumann, H. Zabel, C. Choi, N. Otsuka, M. Longerbone, L.P. Erickson, J. Appl. Phys. 60, 1640 (1986). doi: 10.1063/1.337253
150. R. Fisher, D. Neumann, H. Zabel, H. Morkoç, C. Choi, N. Otsuka, Appl. Phys. Lett. 48, 1223 (1986). doi: 10.1063/1.96988
151. N.A. El-Masry, J.C.L. Tarn, N.H. Karam, J. Appl. Phys. 64, 3672 (1988). doi: 10.1063/1.341409
152. T. Soga, S. Sakai, M. Umeno, S. Hattori, Jpn. J. Appl. Phys. 26, 252 (1987). doi: 10.1143/JJAP.26.252
153. M. Yamaguchi, M. Tachikawa, Y. Itoh, M. Sugo, S. Kondo, J. Appl. Phys. 68, 4518 (1990). doi: 10.1063/1.346156
154. M. Yamaguchi, A. Yamamoto, M. Tachikawa, Y. Itoh, M. Sugo, Appl. Phys. Lett. 53, 2293 (1988). doi: 10.1063/1.100257
155. J.W. Lee, H. Shichijo, H.L. Tsai, R.J. Matyi, Appl. Phys. Lett. 50, 31 (1987). doi: 10.1063/1.98117
156. T. Soga, J. Arokiaraj, H. Taguchi, T. Jimbo, M. Umeno, J. Cryst. Growth 221, 220 (2000). doi: 10.1016/S0022-0248(00)00689-8
157. Y. Takano, M. Hisaka, N. Fujii, K. Suzuki, K. Kuwahara, S. Fuke, Appl. Phys. Lett. 73, 2917 (1998). doi: 10.1063/1.122629
158. R.D. Bringans, D.K. Biegelsen, L.-E. Swartz, F.A. Ponce, Appl. Phys. Lett. 61, 2 (1992). doi: 10.1063/1.108216
159. W.-Y. Uen, Z.-Y. Li, S.-M. Lan, T.-N. Yang, H.-Y. Shin, Semicond. Sci. Technol. 21, 852 (2006). doi: 10.1088/0268-1242/21/7/004
160. K. Eisenbeiser, R. Emrick, R. Droopad, Z. Yu, J. Finder, S. Rockwell, J. Holmes, C. Overgaard, W. Ooms, IEEE Electron Device Lett. 23, 300 (2002). doi: 10.1109/LED.2002.1004215
161. M. Passlack, M. Hong, J.P. Mannaerts, R.L. Opila, S.N.G. Chu, N. Moriya, F. Ren, J.R. Kwo, IEEE Trans. Electron Device 44, 214 (1997). doi: 10.1109/16.557709
162. M. Passlack, M. Hong, J.P. Mannaerts, Appl. Phys. Lett. 68, 1099 (1996). doi: 10.1063/1.115725
163. M. Hong, J. Kwo, C.T. Liu, M.A. Marcus, T.S. Lay, F. Ren, J.P. Mannaerts, K.K. Ng, Y.K. Chen, L.J. Chou, K.C. Hsieh, K.Y. Cheng, in Light emitting devices for optoelectronic applications and the twenty-eighth state of-the-art program on compound semiconductors, ed. by H.Q. Hou, R.E. Sah, S.J. Pearton, F. Ren, K. Wada, The electrochemical society proceedings series (Pennington, NJ, 1998)
164. Y. Tong, G.K. Dalapati, H.J. Oh, B.J. Cho, The effect of interfacial layer of high-κ dielectrics on GaAs substrate, in 211th Electrochemical Society Meeting, Symposium E1 - Advanced Gate Stack, Source/Drain and Channel Engineering for Si-Based CMOS, Chicago, May 2007, p. 584
165. 3) as gate oxide. IEE Proc. Circuits Device Syst. 145 (3), 162-164 (1998)
166. Y.C. Wang, M. Hong, J.M. Kuo, J.P. Mannaerts, J. Kwo, H.S. Tsai, J.J. Krajewski, Y.K. Chen, A.Y. Cho, IEEE Electron Device Lett. 20, 457 (1999). doi: 10.1109/55.784451 457
167. J.-Y. Wu, H.-H. Wang, Y.-H. Wang, M.-P. Houng, IEEE Trans. Electron Device 48, 634 (2001). doi: 10.1109/16.915668
168. P.D. Ye, G.D. Wilk, J. Kwo, B. Yang, H.-J.L. Gossmann, M. Frei, S.N.G. Chu, J.P. Mannaerts, M. Sergent, M. Hong, K.K. Ng, J. Bude, IEEE Electron Device Lett. 24, 209 (2003). doi: 10.1109/LED.2003.812144
169. D.-G. Park, Z. Chen, A.E. Botchkarev, S. Noor Mohammad, H. Morkoç, Philos. Mag. B 74 (3), 219-234 (1996). doi: 10.1080/ 01418639608243519 219-234
170. G G. Fountain, R.A. Rudder, S.V. Hattangady, R.J. Markunas, J.A. Hutchby, Demonstration of an n-channel inversion mode GaAs MISFET, in IEDM Technical Digest, Washington, DC, 3-6 December 1989, p. 887
171. D.S.L. Mui, H. Liaw, A.L. Demirel, S. Strite, H. Morkoç, Appl. Phys. Lett. 59, 2847 (1991). doi: 10.1063/1.105853
172. A. Callegari, P.D. Hoh, D. Buchanan, D. Lacey, Appl. Phys. Lett. 54, 332 (1989). doi: 10.1063/1.100961
173. D.S.L. Mui, S.F. Fang, H. Morkoç, Appl. Phys. Lett. 59, 1887 (1991). doi: 10.1063/1.106178
174. Z. Wang, M.E. Lin, D. Biswas, B. Mazhari, N. Teraguchi, Z. Fan, X. Gui, H. Morkoç, Appl. Phys. Lett. 62, 2977 (1993). doi: 10.1063/ 1.109162
175. D.M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, H. Morkoç, J. Vac. Sci. Technol. B 16, 507 (1998). doi: 10.1116/1.590300
176. D.-G. Park, Z. Chen, D.M. Diatezua, Z. Wang, A. Rockett, H. Morkoç, S.A. Alterovitz, Appl. Phys. Lett. 70, 1263 (1997). doi: 10.1063/1.118547
177. D.-G. Park, J.C. Reed, H. Morkoç, Appl. Phys. Lett. 71, 1210 (1997). doi: 10.1063/1.119853
178. D.G. Park, D. Li, M. Tao, Z. Fan, A.E. Botchkarev, S.N. Mohammad, H. Morkoç, J. Appl. Phys. 81, 516 (1997). doi: 10.1063/1.364130
179. K. Rajagopalan, R. Droopad, J. Abrokwah, P. Zurcher, P. Fejes, M. Passlack, IEEE Electron Dev. Lett. 28, 100 (2007). doi: 10.1109/ LED.2006.889502
180. P.J. Tsai, L.K. Chu, Y.W. Chen, Y.N. Chiu, H.P. Yang, P. Chang, J. Kwo, J. Chi, M. Hong, J. Cryst. Growth 301-302, 1013 (2007). doi: 10.1016/ j.jcrysgro.2006.11.245
181. R.J.W. Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, R. Droopad, M. Passlack, I.G. Thayne, IEEE Electronics Lett. 43, 543 (2007). doi: 10.1049/el:20070427