Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship

Applied Physics Letters

Volumn 85, Issue 15, 2004, Pages 3074-3076

  Van Den Berg, J A ^a   Carter, G ^a   Armour, D G ^a   Werner, M ^a   Goldberg, R D ^b   Collart, E J H ^b   Bailey, P ^c   Noakes, T C Q ^c  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b Ion Implant Division   (United Kingdom)

^c DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DEFECTS; DOSIMETRY; ENERGY DISSIPATION; INTERFACES (MATERIALS); ION IMPLANTATION; SCATTERING; SPECTRUM ANALYSIS;

ENERGY SPECTRA; MEDIUM ENERGY ION SCATTERING (MEIS); ROOM TEMPERATURE;

SILICON;

EID: 8644234272     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801671     Document Type: Article

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