Scaling down of ultrathin HfO 2 gate dielectrics by using a nitrided Si surface

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 3, 2004, Pages 916-919

  Kang, Chang Seok ^a   Choi, Rino ^a   Cho, Hag Ju ^a   Kim, Y H ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS (EOT); NITRIDATION; POST-METAL ANNEALING (PMA); SEMICONDUCTOR PARAMETER ANALYZERS;

CURRENT DENSITY; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; HYSTERESIS; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; MOS CAPACITORS; MOSFET DEVICES; PERMITTIVITY; RAPID THERMAL ANNEALING; SILICON; SILICON WAFERS; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

DIELECTRIC MATERIALS;

EID: 3242698944     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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