Post deposition annealing of Hf aluminate films on Si investigated by ion backscattering and nuclear reaction analyses

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 266, Issue 8, 2008, Pages 1162-1165

  Miotti, L ^a,b   Pezzi, R P ^a,c   Copel, M ^c   Baumvol, I J R ^a,b  

^a FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

^b UNIVERSITY OF CAXIAS DO SUL   (Brazil)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Aluminium compounds; Annealing; Atomic layer deposition; Atomic transport; Dielectric; Dielectric thin films; Hafnium compounds; Interdiffusion; Low energy ion scattering; Medium energy ion scattering; Narrow nuclear reaction profiling; Noncrystalline structure

Indexed keywords

ALUMINA; ANNEALING; ATOMIC LAYER DEPOSITION; BACKSCATTERING; CRYSTAL STRUCTURE; HAFNIUM; INTERDIFFUSION (SOLIDS); SILICON;

ATOMIC TRANSPORT; DIELECTRIC THIN FILMS; ION BACKSCATTERING; LOW ENERGY ION SCATTERING; MEDIUM ENERGY ION SCATTERING; NARROW NUCLEAR REACTION PROFILING; NUCLEAR REACTIONS;

THIN FILMS;

EID: 43049165926     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2008.01.042     Document Type: Article

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