Damage accumulation and dopant migration during shallow As and Sb implantation into Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 216, Issue 1-4, 2004, Pages 67-74

  Werner, M ^a   Van den Berg, J A ^a   Armour, D G ^a   Vandervorst, W ^b   Collart, E H J ^c   Goldberg, R D ^c   Bailey, P ^d   Noakes, T C Q ^d  

^a UNIVERSITY OF SALFORD   (United Kingdom)

^b IMEC   (Belgium)

^c Applied Materials UK Ltd   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; ARSENIC; CRYSTAL GROWTH; CRYSTAL STRUCTURE; CRYSTALLIZATION; DOPING (ADDITIVES); INTERFACES (MATERIALS); ION IMPLANTATION; NUCLEATION; SECONDARY ION MASS SPECTROMETRY;

DOPANT MIGRATION; DOPANTS; MEDIUM ENERGY ION SCATTERING (MEIS);

SILICON;

EID: 1042288924     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.11.022     Document Type: Conference Paper

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