SCOPUS 정보 검색 플랫폼

Volumn 16, Issue 5, 2009, Pages 433-442

Physical characterization of the metal/high-k layer interaction upon annealing

(9) Conard, T a Franquet, A a Vandervorst, W a,c Reading, M b Van Den Berg, J A b Van Elshocht, S a Schram, T a Adelmann, C a De Gendt, S a,c

a IMEC (Belgium)

b UNIVERSITY OF SALFORD (United Kingdom)

c UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; CHEMICAL MODIFICATION; DIELECTRIC DEVICES; GATE DIELECTRICS; HAFNIUM COMPOUNDS; INTERFACE STATES; METAL ANALYSIS; METALS; SECONDARY ION MASS SPECTROMETRY; SILICON COMPOUNDS; TANTALUM OXIDES; TITANIUM NITRIDE; WORK FUNCTION;

CHEMICAL STATE; EFFECTIVE WORK FUNCTION; HIGH-K OXIDES; LAYER INTERACTION; NITROGEN CONTENT; PHYSICAL ANALYSIS; PHYSICAL CHARACTERIZATION; THERMAL BUDGET;

HIGH-K DIELECTRIC;

EID: 63149093135 PISSN: 19385862 EISSN: 19386737 Source Type: Conference Proceeding
DOI: 10.1149/1.2981624 Document Type: Conference Paper

Times cited : (3)

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