Fabrication and characterization of suspended uniaxial tensile strained-Si nanowires for gate-AH-around n-MOSFETs

ECS Transactions

Volumn 16, Issue 10, 2009, Pages 57-68

  Hashemi, P ^a   Canonico, M ^b   Yang, J K W ^c   Gomez, L ^a   Berggren, K K ^c   Hoyt, J L ^a  

^a Massachusetts Institute of Technology   (United States)

^b FREESCALE SEMICONDUCTOR INC   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GERMANIUM COMPOUNDS; GERMANIUM METALLOGRAPHY; NANOWIRES; RAMAN SPECTROSCOPY; SI-GE ALLOYS; SIGNAL TO NOISE RATIO; SILICON; URANIUM METALLOGRAPHY; VANADIUM METALLOGRAPHY;

E-BEAM LITHOGRAPHY; ELECTRICAL MEASUREMENT; FABRICATION AND CHARACTERIZATIONS; GATE-ALL-AROUND; MICRO RAMAN SPECTROSCOPY; SUB-THRESHOLD BEHAVIOR; TRANSCONDUCTANCE ENHANCEMENT; UNIAXIAL TENSILE;

MOSFET DEVICES;

EID: 63149083363     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2986753     Document Type: Conference Paper

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