Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 39-41

  Peterson, R L ^a   Hobart, K D ^b   Yin, H ^a   Sturm, J C ^a  

^a Princeton University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAIN; CRYSTAL DIRECTION; ELASTIC CONSTANTS; TENSILE STRAIN;

ANISOTROPY; BOROPHOSPHATE GLASS; MATHEMATICAL MODELS; POISSON RATIO; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; STRAIN; STRAIN MEASUREMENT; STRESSES; ULTRATHIN FILMS;

CRYSTAL ORIENTATION;

EID: 16244387315     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Ghani et al., IEDM 2003, pp. 11.6.1-11.6.3
2. Thompson, Spring 2004 MRS Meeting, B6.3, and private communication
3. Haugerud et al., JAP 94, 4102 (2003); Wang et al., TED 50, 529 (2003)
4. Haugerud et al., JAP 94, 4102 (2003); Wang et al., TED 50, 529 (2003)
5. Thompson et al., EDL 25, 191 (2004)
6. Yin et al., IEDM 2003, pp. 3.2.1-3.2.4
7. Peterson et al., EMC 2004, pp. 33-34
8. Hobart et al., J. Elec. Mat. 29, 897 (2000)
9. Jain et al., Phys. Rev. B 52, 6247 (1995)
10. Yin et al., JAP 91, 9716 (2002)
11. Yin et al., APL 82, 3853 (2003)
12. Brantley, JAP 44, 534 (1973); Wortman and Evans, JAP 36, 153 (1965).
13. Brantley, JAP 44, 534 (1973); Wortman and Evans, JAP 36, 153 (1965).