Strained silicon on wafer level by wafer bonding: Materials processing, strain measurements and strain relaxation

ECS Transactions

Volumn 16, Issue 8, 2009, Pages 311-320

  Reiche, M ^a   Moutanabbir, O ^a   Himcinschi, C ^a,e   Christiansen, S ^a,f   Erfurth, W ^a   Gosele U ^a   Mantl, S ^b   Buca, D ^b   Zhao, Q T ^b   Loo, R ^c   Nguyen, D ^c   Muster, F ^d   Petzold, M ^d  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c IMEC   (Belgium)

^d FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

^e CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^f LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; SI-GE ALLOYS; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES; SILICON WAFERS; STRAINED SILICON; SUBSTRATES; WAFER BONDING;

BIAXIAL STRAINS; COMPRESSIVE STRAIN; DEVICE PERFORMANCE; MATERIALS PROCESSING; OXIDIZED SILICON SUBSTRATES; SILICON DEVICES; THIN SILICON LAYERS; UNI-AXIAL STRAINS;

TENSILE STRAIN;

EID: 63149124328     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2982883     Document Type: Conference Paper

References (27)

1. A. Oishi, O. Fujii, T. Yokoyama, K. Ota, T. Sanuki, H. Inokuma, K. Eda, T. Idaka, H. Miyajima, S. Iwasa, H. Yamasaki, K. Oouchi, K. Matsuo, H. Nagano, T. Komoda, Y. Okayama, T. Matsumoto, K. Fukasaki, T. Shimizu, K. Miyano, T. Suzuki, K. Yahashi, A. Horiuchi, Y. Takegawa, K. Saki, S. Mori, K. Ohno, I. Mizushima, M. Saito, M. Iwai, S. Yamada, N. Nagashima and F. Matsuoka, IEDM Techn. Digest, p. 239 (2005).
2. A. Thean, in Silicon-on-Insulator Technology and Devices 13, G. K. Celler, S. Cristoloveanu, S. W. Bedell, F. Gamiz, B.-Y. Nguyen and Y. Omura, Editors, ECS Transactions, 6(4), p. 287, The Electrochem. Society, Pennington, NJ (2007).
3. H. S. Yang, R. Malik, S. Narasima, Y. Li, R. Divakaruni, P. Agnello, S. Allen, A. Antreasyan, J. C. Arnhold, K. Bandy, M. Belyansky, A. Bonnoit, G. Bronner, V. Chan, X. Chen, Z. Chen, D. Chidambarro, A. Chou, W. Clark, S. W. Crowder, B. Engel, H. Harifuchi, S. F. Huang, R. Jagannathan, F. F. Jamin, Y. Kohyama, H. Kuroda, C. W. Lai, H. K. Lee, W-H. Lee, E. H. Lim, W. Lai, A. Mallikarjunan, K. Matsumoto, A. McKnight, J. Nayak, H. Y. Ng, S. Panda, R. Rengarajan, M. Steigerwalt, S. Subbanna, K. Subramanian, J. Sudijono, G. Sudo, S-P. Sun, B. Tessier, Y. Toyoshima, P. Tran, R. Wise, R. Wong, I. Y. Yang, C. H. Wann, L. T. Su, IEDM Techn. Digest, p. 1075 (2004).
4. Y. C. Yeo, Semicond. Sci. Technol. 22, S177 (2007).
5. M. Wiatr, Advanced SOI CMOS transistor technology for high performance microprocessors, MAR08 Meeting of the American Physical Society, Abstr., March 10-14, New Orleans.
6. International Technology Roadmap for Semiconductors, Update 2006.
7. M. Horstmann, A. Wei, T. Kammler, J. Höntschel, H. Bierstedt, T. Feudel, K. Frohberg, M. Gerhardt, A. Hellmich, K. Hempel, J. Hohage, P. Javorka, J. Klais, G. Koerner, M. Lenski, A. Neu, R. Otterbach, P. Press, C. Reichel, M. Trentsch, B. Trui, H. Salz, M. Schaller, H.-J. Engelmann, O. Herzog, H. Ruelke, P. Huebler, R. Stephan, D. Greenlaw, M. Raab, N. Kepler, H. Chen, D. Chidambarro, D. Fried, J. Holt, W. Lee, H. Nii, S. Panda, T. Sato, A. Waite, S. Luning, K. rim, D. Schepis, M. Khare, S. F. Huang, J. Pellerin, and L. T. Su, IEDM Techn. Digest, p. 243 (2005).
8. K. Mistry, M. Armstrong, C. Auth, S. Cea, T. Coan, T. Ghani, T. Hoffmann, A. Murthy, J. Sandford, R. Shaheed, K. Zawadzki, K. Zhang, S. Thompson, and M. Bohr, 2004 Symp. on VLSI Technology, Digest, p. 50 (2004).
9. DA. Antoniadis, I. Aberg, C. Ni Chleirigh, O. M. Nayfeh, A. Khakifirooz, and J. L. Hoyt, IBM J. Res. and Dev. 50, 363 (2006)
10. P. M. Mooney, Mater. Sci. Eng. R 17, 105 (1996).
11. E. A. Fitzgerald, Y.-H. Xie, M. L. Green, D. Brasen, A. R. Kortan, J. Michel, Y.-J. Mii, and B. E. Weir, Appl. Phys. Lett. 59, 811 (1991).
12. S. Mantl, B. Holländer, R. Liedtke, S. Mesters, H.-J. Herzog, H. Kibbel, and T. Hackbarth, Nucl. Instrum. Meth. Phys. Res. B 147, 29 (1999).
13. S. Mantl, D. Buca, B. Holländer, St. Lenk, N. Hueging, M. Luysberg, R. Carius, R. Loo, M. Caymax, H. Schäfer, I. Radu, M. Reiche, S. Christiansen, and U. Gosele, in SiGe and Ge: Materials, Processing, and Devices, GD. Harame et al., Editors, ECS Transactions, 3(7), p. 1047, The Electrochem. Society, Pennington, NJ (2006).
14. K. Rim, K. Chan, L. Shi, D. Boyd, J. Ott, N. Klymko, F. Cardone, L. Tai, S. Koester, M. Cobb, D. Canaperi, B. To, E. Duch, I. Babich, R. Carruthers, P. Saunders, G. Walker, Y. Zhang, M. Steen, and M. Ieong, IEDM Techn. Digest, p. 47 (2003).
15. T. A. Langdo, A. Lochtefeld, M. T. Currie, R. Hammond, V. K. Yang, J. A. Carlin, C. J. Vineis, G. Braithwaite, H. Badawi, M. T. Bulsara, and E. A. Fitzgerald, Proc. IEEE SOI Conf. 2002, p. 211 (2002).
16. T. S. Drake, C. Ni Chleirigh, ML. Lee, A. J. Pitera, E. A. Fitzgerald, D. A. Antoniadis, D. H. Anjum, J. Li, R. Hull, N. Klymko, and J. L. Hoyt, J. Electron. Mater. 32, 972 (2003).
17. M. Reiche, C. Himcinschi, U. Gösele, S. Christiansen, S. Mantl, D. Buca, Q. T. Zhao, S. Feste, R. Loo, D. Nguyen, W. Buchholtz, A. Wie, M. Horstmann, D. Feijoo, and P. Storck, in Silicon-on-Insulator Technology and Devices 13, G. K. Celler, S. Cristoloveanu, S. W. Bedell, F. Gamiz, B.-Y. Nguyen and Y. Omura, Editors, ECS Transactions, 6(4), p. 339, The Electrochem. Society, Pennington, NJ (2007).
18. A. Wei, S. Dünkel, R. Boschke, T. Kammler, K. Hempel, J. Rinderknecht, M. Horstmann, I. Cayrefourcq, F. Metral, M. Kennard, and E. Guiot, in Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3, M. C. Ötztürk et al. Editors, ECS Transactions, 6(1), p. 15, The Electrochem. Society, Pennington, NJ (2007).
19. A. V-Y. Thean, D. Zhang, V. Vartanian, V. Adams, J. Conner, M. Canonico, H. Desjardin, P. Grudowski, B. Gu, Z.-H. Shi, S. Murphy, G. Spencer, S. Filipiak, D. Goedeke, X-D. Wang, B. Goolsby, V. Dhandapani, L. Prabhu, S. Backer, L-B. La, D. Burnett, T. White, B.-Y. Nguyen, B. E. white, S. Venkatesan, J. Mogab, I. Cayrefourcq, and C. Mazure, 2006 Symp. On VLSI Technology, Digest (2006).
20. C. Himcinschi, M. Reiche, R. Scholz, S. Christansen, and U. Gösele, Appl. Phys. Lett. 90, 231909(2007).
21. C. Himcinschi, R. Singh, I. Radu, A. Milenin, W. Erfurth, M. Reiche, U. Gösele, and S. Christiansen, Appl. Phys. Lett. 90, 021902 (2007).
22. O. Moutanabbir, M. Reiche, W. Erfurth, R. Scholz, and U. Gösele, Strain relaxation in nanostructured ultra thin SOI, Paper # 08-122 presented at the 2008 IEEE Intern. SOI Conference, Oct. 6-9, 2008, Hudson River Valley, New York.
23. N. Hayazawa, M. Motohashi, Y. Saito, and S. Kawata, Appl. Phys. Lett. 86, 263114(2005).
24. L. Zhu, J. Atesang, P. Dudek, M. Hecker, J. Rinderknecht, Y. Ritz, H. Geisler, U. Herr, R. Geer, and E. Zschech, Materials Science-Poland 25, 19 (2007).
25. P. Zhang, A. A. Istratov, E. R. Weber, C. Kisielowski, H. He, C. Nelson, and J. C. H. Spence, Appl. Phys. Lett. 89, 161907 (2006).
26. M. Hytch, F. Houdellier, F. Hue, and E. Snoeck, Nature 453, 1085 (2008).
27. A. Khakifirooz, IEEE Electr. Dev. Lett. 27, 402 (2006)