Processing and characterization of recessed-gate AlGaN/GaN HFETs

ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems

Volumn , Issue , 2008, Pages 151-154

  Ketteniss N ^a   Eickelkamp, M ^a   Noculak, A ^a   Jansen, R H ^a   Vescan, A ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROSYSTEMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; STRUCTURAL OPTIMIZATION; TRANSCONDUCTANCE;

ALGAN/GAN HFETS; BARRIER THICKNESS; CHANNEL SEPARATIONS; CHARGE CONTROL MODELS; DC CHARACTERIZATIONS; ENHANCEMENT MODES; GATE RECESS DEPTHS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; ICP ETCH; OPTIMUM THICKNESS; RECESSED GATES; THEORETICAL PREDICTIONS;

FIELD EFFECT TRANSISTORS;

EID: 62949216434     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.2008.4743303     Document Type: Conference Paper

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