0.18 μm double-recessed III-nitride metal-oxide double heterostructure field-effect transistors

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Adivarahan, Vinod ^a   Gaevski, Mikhail ^a   Islam, Md Monirul ^a   Tipirneni, Naveen ^a   Zhang, Bin ^a   Deng, Yanqing ^a   Yang, Zijiang ^a   Khan, Asif ^a  

^a The Department of Mechanical Engineering   (United States)

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EID: 44949185574     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422460     Document Type: Conference Paper

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