Formation of ohmic contact by pre-annealing of shallow nanopores in macroporous silicon and its characterization

Solid-State Electronics

Volumn 54, Issue 5, 2010, Pages 568-574

  Maji, S ^a   Dev Das, R ^b   Jana, M ^b   Roychaudhuri, C ^b   Mondal, N ^c   Dutta, S K ^d   Bandopadhyay, N R ^b   Saha, H ^c  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

^c JADAVPUR UNIVERSITY   (India)

^d UNIVERSITY OF CALCUTTA   (India)

Author keywords

Contact resistance; Macroporous silicon; Ohmic contact; Pre annealing; Shallow nanopores

Indexed keywords

ELECTRICAL APPLICATIONS; ELECTRICAL CHARACTERIZATION; ELECTRICAL CONTACTS; ELECTRICAL SENSORS; GROWTH PARAMETERS; IV CHARACTERISTICS; LOW RESISTANCE; MACRO POROUS SILICON; MACROPORES; MICROSYSTEMS ENGINEERING; NANO-POROUS; OHMIC BEHAVIOUR; P-TYPE; PORE DIAMETERS; PREANNEALING; PROMISING MATERIALS; SHALLOW NANOPORES; SPECIFIC CONTACT RESISTANCES; SUPER CAPACITOR; WIDE SPECTRUM;

ALUMINUM; ANNEALING; BIOSENSORS; COALESCENCE; CONTACT RESISTANCE; ELECTRIC CONTACTORS; GRAIN GROWTH; NANOPORES; OHMIC CONTACTS; PHOTONIC DEVICES; VACUUM; VACUUM EVAPORATION;

POROUS SILICON;

EID: 77949288237     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.12.024     Document Type: Article

References (39)

1. Bettotti P., Dalnegro L., Gaburro Z., Pavesi L., Lui A., Galli M., et al. J Appl Phys 92 (2002) 6966
2. Mariolo J.R., Atwater H.A., and Lewis N.N. J Phys Chem C 112 (2008) 6194
3. Sun W., Puzas J.E., Sheu T.J., and Fauchet P.M. Phys Status Solidi (a) 204 (2007) 1429
4. Clarkson J.P., Fauchet P.M., Rajalingam V., and Hirschman K.D. IEEE Sens J 7 (2007) 329
5. Desplobain S., Gautier G., Semai J., Ventura L., and Roy M. Phys Status Solidi (C) 4 (2007) 2180
6. Rossi A.M., Wang L., Reipa V., and Murphy T.E. Biosens Bioelectron 23 (2007) 741
7. Devdas R., Roychaudhuri C., Maji S., Das S., and Saha H. Biosens Bioelectron 24 (2009) 3215
8. Palestino G., Legros R., Agarwal V., Perez E., and Gergely C. Sens Actuator B: Chem 135 (2008) 27
9. Steinhauer C., Ressine A., Varga G.M., Laurell T., Berrebaeck C.A.K., and Wingren C. Anal Biochem 341 (2004) 204
10. Saarinen J., Weiss S.M., Fauchet P.M., and Sipe J.E. J Appl Phys 104 (2008) 013103
11. Das J., Dey S., Hossain S.M., Rittersma Z.M., and Saha H. IEEE Sensors 3 (2003) 414
12. In: Saha H., and Pramanik C. (Eds). Materials and Manufacturing Processes vol. 21 (2006), Marcel Dekker 301
13. Balagurov L.A., Bayliss S.C., Kasatochkin V.S., Petrova E.A., Unal B., and Yarkin D.G. J Appl Phys 90 (2001) 1
14. Dhar S., and Chakraborti S. Appl Phys Lett 68 (1996) 1392
15. Kanungo J., Pramanik C., Bandopadhyay S., Gangopadhyay U., Das L., Saha H., et al. Semicond Sci Tech 21 (2006) 964
16. Archer M., Christophersen M., and Fauchet P.M. Sens Actuators B 106 (2005) 347
17. Wallner J.Z., Nagar N., Friedrich C.R., and Bergstrom P.L. Phys Status Solidi (a) 204 (2007) 1327
18. Wallner J.Z., and Bergstrom P.L. Phys Status Solidi (a) 204 (2007) 1469
19. Contopanagos H., Pagonis D.N., and Nassiopoulou A.G. Phys Status Solidi (a) 250 (2008) 2548
20. Prestidge C.A., Barnes T.J., Mierczynska-Vasilev A., Kempson I., Peddie F., and Barnett C. Phys Status Solidi (a) 205 (2008) 311
21. Lehman V. J Electrochem Soc 140 (1993) 2836
22. Fonthal F, Trifonov T, Rodrignez A, Goyes C, Vilanova X, Pallares J, in: IEEE Conference On Fourth Congress of Electronics, Robotics and Automative Mechanics; 2007, p. 170.
23. Lust S., and Levy-Clement C. Phys Status Solidi (a) 182 (2000) 17
24. Harraz F.A., Kamada K., Kobayashi K., Sakka T., and Ogata Y.H. J Electrochem Soc 152 (2005) c213
25. Zheng J., Christophersen M., and Bergstrom P.L. Phys Status Solidi (a) 202 (2005) 1402
26. Karachevtsa L.A., Lytvynenko O.A., and Malovechko E.A. Semicond Phys, Quantum Electron Optoelectron 4 (2001) 40
27. Kanungo J., Maji S., Saha H., and Basu S. Solid State Electron 53 (2009) 663
28. Sawdai D., Pavlidis D., and Cui D. IEEE Trans Electron Dev 46 (1999) 1302
29. Hossain S.M., Das J., Chakraborty S., Dutta S.K., and Saha H. Semicond Sci Technol 17 (2002) 55
30. Kochergin V., and Foll H. Phys Status Solidi (c) 4 (2007) 2180
31. Zhou F., Lee J., and Laverina E.J. Scripta Mater 44 (2001) 2013
32. Banerjee M., Bontempi E., Bhattachrya S., Maji S., Basu S., and Saha H. J Mater Sci, Mater Electron 20 4 (2009) (online)
33. Lord H.A. IEEE Trans Semiconduct Manuf 1 (1988) 105
34. Gleits H. Acta Mater 48 (2000) 1
35. Weismuller T. Nanostruct Mater 3 (1993) 261
36. Mallow T.R., and Koch C.C. Acta Mater 45 (1977) 2177
37. Beck P.A., Kremer J.C., Demer L.J., and Holzworth M.L. Trans Am Inst Min Eng 175 (1972) 372
38. Berger H.H. Solid State Electron 15 (1972) 145
39. Theodoropoulou M., Karahaliou P.K., Krontiras C.A., Georga S.N., Xanthopoulos N., Tsamis C., et al. J Appl Phys 96 (2004) 7637