Stable aluminium ohmic contact to surface modified porous silicon

Solid-State Electronics

Volumn 53, Issue 6, 2009, Pages 663-668

  Kanungo, J ^a   Maji, S ^a   Saha, H ^a   Basu, S ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Ohmic contact; Palladium metal; Porous silicon; Stability; Surface modification

Indexed keywords

AGEING EFFECTS; CHEMICAL DIPPING METHODS; ENERGY-DISPERSIVE X-RAYS; FIELD EMISSION-SCANNING ELECTRON MICROSCOPIES; J-V CHARACTERISTICS; LINEAR RELATIONSHIPS; LOW CONCENTRATIONS; LOW RESISTANCES; MODIFIED POROUS SILICONS; MODIFIED SURFACES; PALLADIUM CHLORIDES; PD CLUSTERS; POROUS SILICON SURFACES; SHORT DURATIONS; SPECIFIC CONTACT RESISTANCES; SURFACE MODIFICATION; SURFACE-MODIFIED; TIME PERIODS; TRANSMISSION LINE MODELS; X-RAY IMAGES; X-RAY PHOTOEMISSION SPECTROSCOPIES;

ALUMINUM; CHLORINE COMPOUNDS; ELECTRIC CONTACTORS; EMISSION SPECTROSCOPY; FIELD EMISSION; FIELD EMISSION MICROSCOPES; OHMIC CONTACTS; OXYGEN; PALLADIUM; SCANNING ELECTRON MICROSCOPY; SURFACE TREATMENT;

POROUS SILICON;

EID: 67349182590     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.03.012     Document Type: Article

References (22)

1. Archer M., and Fauchet P.M. Electrical sensing of DNA hybridization in porous silicon layers. Phys Status Solidi A 198 (2003) 503-5077
2. Barillaro G., Nannini A., and Pieri F. APSFET: a new, porous silicon based gas sensing devices. Sensors Actuat B 93 (2003) 263-270
3. Tsamis C., Tsoura L., Nassiopoulou A.G., Travlos A., Salmas C.E., Hatzilyberis K.A., and Ndroutsopoulos G.P. Hydrogen catalytic oxidation reaction on Pd-doped porous silicon. IEEE Sensors J 2 (2002) 89-95
4. In: Canham L. (Ed). Properties of porous silicon (1997), INSPEC - The Institution of Electrical Engineers, United Kingdom
5. Pavesi L., and Dubos P. Random porous silicon multilayers application to distributed Bragg reflectors and interferential Fabry Perot filters. Semicond Sci Technol 12 (1997) 570-575
6. Dimitrov D.B. Current-voltage characteristics of porous silicon layer. Phys Rev B 51 3 (1995) 1562-1566
7. Deresmes D., Marissael V., Stievenard D., and Ortega C. Electrical behaviour of aluminium-porous silicon junctions. Thin Solid Films 255 (1995) 258-261
8. Zimin S.P., Kuznetsov V.S., and Prokaznikov A.V. Electrical characteristics of aluminium contacts to porous silicon. Appl Surf Sci 91 (1995) 355-358
9. Martin-Palma R.J., Perez-Rigueiro J., Guerrero-Lemus R., Moreno J.D., and Martinez-Duart J. Ageing of aluminium electrical contacts to porous silicon. J Appl Phys 85 (1999) 583-586
10. Angelescu A, Kleps I. Metallic contacts on porous silicon layers. In: IEEE conf.; 1998. p. 447-50.
11. Kanungo J., Pramanik C., Bandopadhyay S., Gangopadhyay U., Das L., Saha H., et al. Improved contacts on porous silicon layer by electroless nickel plating and copper thickening. Semicond Sci Technol 21 (2006) 964-970
12. Andersson H.A., Thungstrom G., and Nilsson H. Electroless deposition and silicidation of Ni contacts in to p-type porous silicon. J Porous Mater 15 (2008) 335-341
13. Jeske M., Schultze J.W., Thonissen M., and Munder H. Electrodeposition of metals into porous silicon. Thin Solid Films 255 (1995) 63-66
14. Zimin S.P., and Komarov E.P. Influence of short term annealing on the conductivity of porous silicon and the transition resistivity of an aluminium-porous silicon contact. Tech Phys Lett 24 3 (1998) 226-228
15. Hossain S.M., Das J., Chakraborty S., Dutta S.K., and Saha H. Electrode design and planar uniformity of anodically etched large area porous silicon. Semicond Sci Technol 17 (2002) 55-59
16. Saha H., Dutta S.K., Hossain S.M., Chakraborty S., and Saha A. Mechanism and control of formation of porous silicon in p-type silicon. Bull Mater Sci 21 3 (1998) 195-202
17. Schokley W. Report AI-TOR-64-207. Air Force Atomic Laboratory, Wright Patterson Air Force Base; 1964.
18. Berger H.H. Models for contacts to planar devices. Solid state Electron 15 2 (1972) 145-158
19. Kim K.H., Gangopadhyay U., Han C.S., Chakraborty K., and Yi J. Screen printed contacts formation by rapid thermal annealing in multicrystalline silicon solar cell. J Korean Vac Sci Technol 6 3 (2002) 120-125
20. Reeves G.K., and Harrison H.B. Obtaining the specific contact resistance from transmission line model measurement. IEEE Electron Device Lett EDL-3 (1982) 111-113
21. Rahimi F., and Irajizad A. Effective factors on Pd growth on porous silicon by electroless-plating: response to hydrogen. Sensors Actuat B 115 (2006) 164-169
22. Mizsei J., Shrair J.A., and Zolomy I. Investigation of Fermi-level pinning at silicon/porous-silicon interface by vibrating capacitor and surface photovoltage measurements. Appl Surf Sci 235 (2004) 376-388