Improved contacts on a porous silicon layer by electroless nickel plating and copper thickening

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 964-970

  Kanungo, J ^a   Pramanik, C ^b   Bandopadhyay, S ^c   Gangopadhyay, U ^a   Das, L ^a   Saha, H ^a   Gettens, Robert T T ^d  

^a JADAVPUR UNIVERSITY   (India)

^b INDIAN INSTITUTE OF ENGINEERING SCIENCE AND TECHNOLOGY   (India)

^c Durgapur Women's College   (India)

^d Syracuse University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEPOSITION; ELECTROLESS PLATING; EVAPORATION; NICKEL; SURFACE ROUGHNESS;

CONTACT RESISTANCE; COPPER THICKENING; ELECTRICAL CHARACTERIZATION; LATERAL STRUCTURE CONTACT;

POROUS SILICON;

EID: 33745272261     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/023     Document Type: Article

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