Thermal annealing of porous silicon to develop a quasi monocrystalline structure

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue 4, 2009, Pages 305-311

  Banerjee, M ^a   Bontempi, E ^b   Bhattacharya, S ^c   Maji, S ^a   Basu, S ^a   Saha, H ^a  

^a JADAVPUR UNIVERSITY   (India)

^b UNIVERSITY OF BRESCIA   (Italy)

^c QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ANNEALING CONDITIONS; ATOMIC FORCES; BULK CRYSTALLINE; CRYSTALLINITY; ELECTRICAL RESISTIVITIES; ELECTROCHEMICAL ANODIZATION; FIELD EMISSION SCANNING; GRAZING INCIDENCES; HYDROGEN ATMOSPHERES; LOW POROSITIES; MONOCRYSTALLINE STRUCTURES; QUASI MONOCRYSTALLINE POROUS SILICONS; RECRYSTALLIZATION; REFLECTION LOSS; SURFACE LAYERS; TEMPERATURE RANGES; THERMAL-ANNEALING; X- RAY DIFFRACTIONS;

ANNEALING; ELECTRIC RESISTANCE; FIELD EMISSION; HYDROGEN; NONMETALS; OPTOELECTRONIC DEVICES; REAL TIME SYSTEMS;

POROUS SILICON;

EID: 59749093574     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9725-y     Document Type: Article

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