Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous silicon/p-cSi structures

Journal of Applied Physics

Volumn 96, Issue 12, 2004, Pages 7637-7642

  Theodoropoulou, M ^a   Karahaliou, P K ^a   Krontiras, C A ^a   Georga, S N ^a   Xanthopoulos, N ^a   Pisanias, M N ^a   Tsamis, C ^b   Nassiopoulou, A G ^b  

^a UNIVERSITY OF PATRAS   (Greece)

^b INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; NETWORKS (CIRCUITS); POROUS SILICON; SEMICONDUCTOR JUNCTIONS;

CURRENT-VOLTAGE (I-V) CHARACTERISTICS; OHMIC CONTACT; POOLE-FRENKEL CONDUCTION; VOLTAGE DROP;

ALUMINUM;

EID: 11044224345     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1815388     Document Type: Article

References (27)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. A. G. Cullis, L. T. Canham, and P. D. J. Calcott, J. Appl. Phys. 82, 909 (1997).
3. L. A. Balagurov, D. G. Yarkin, E. A. Petrova, A. F. Orlov, and S. Ya. Andrushin, J. Appl. Phys. 82, 4647 (1997).
4. R. C. Anderson, R. S. Muller, and C. W. Tobias, J. Electrochem. Soc. 138, 3406 (1991).
5. L. A. Balagurov, N. B. Smirnov, E. A. Kozhuhova, A. F. Orlov, E. A. Petrova, and A. Ya. Polyakov, Izv. Akad. Nauk Arm., Fiz. 58, 78 (1994).
6. L. A. Balagurov, S. C. Bayliss, A. F. Orlov, E. A. Petrova, B. Unal, and D. G. Yarkin, J. Appl. Phys. 90, 4184 (2001).
7. L. A. Balagurov, S. C. Bayliss, V. S. Kasatochkin, E. A. Petrova, B. Unal, and D. G. Yarkin, J. Appl. Phys. 90, 4543 (2001).
8. K. Borgi, K. Khirouni, H. Maaref, and G. C. Bourgoin, Eur. Phys. J.: Appl. Phys. 2, 107 (1998).
9. M. Ben-Chorin, F. Möller, and F. Koch, J. Lumin. 57, 159 (1993).
10. M. Ben-Chorin, F. Möller, F. Koch, W. Schirmacher, and M. Eberhard, Phys. Rev. B 51, 2199 (1995).
11. V. P. Parkhutik, J. Porous Mater. 7, 97 (2000).
12. G. Pennelli, J. Appl. Phys. 80, 5116 (1996).
13. M. R. Reshotko, A. Saar, and I. Balberg, Phys. Status Solidi A 197, 113 (2003).
14. E. Axelford, A. Givani, J. Shappir, Y. Feldman, and A. Saar, J. Non-Cryst. Solids 305, 235 (2002).
15. M. Ben-Chorin, F. Möller, and F. Koch, Phys. Rev. B 49, 2981 (1994).
16. S. P. Zimin, Semiconductors 34, 353 (2000).
17. T. Futagi, T. Matsumoto, M. Katsuno, Y. Ohta, H. Mimura, and K. Kitamura, Appl. Phys. Lett. 63, 1209 (1993).
18. L. Pavesi et al., J. Appl. Phys. 75, 1118 (1994).
19. E. Bhattacharya, P. Ramesh, and C. Suresh Kumar, J. Porous Mater. 7, 299 (2000).
20. M. Ben-Chorin, F. Möller, and F. Koch, J. Appl. Phys. 77, 4482 (1995).
21. G. Kaltsas and A. G. Nassiopoulou, Sens. Actuators, A 65, 175 (1998).
22. S. N. Georga and M. N. Pisanias, J. Phys. D 16, 1521 (1983).
23. M. Theodoropoulou, C. A. Krontiras, N. Xanthopoulos, S. N. Georga, M. N. Pisanias, C. Tsamis, and A. G. Nassiopoulou, Phys. Status Solidi A 197, 279 (2003).
24. A. K. Jonscher, Dielectric Relaxation in Solids (Chelsea Dielectrics, London, 1983).
25. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
26. M. S. Tyagi, Introduction to Semiconductor Materials and Devices (Wiley, New York, 1991).
27. M. Theodoropoulou, C. A. Krontiras, N. Xanthopoulos, S. N. Georga, M. N. Pisanias, C. Tsamis, and A. G. Nassiopoulou, Mater. Sci. Eng., B 101, 334 (2003).