Epitaxial growth of ZnO films at extremely low temperature by atomic layer deposition with interrupted flow

Materials Chemistry and Physics

Volumn 120, Issue 2-3, 2010, Pages 236-239

  Ku, Ching Shun ^a   Lee, Hsin Yi ^a,b   Huang, Jheng Ming ^c   Lin, Chih Ming ^c  

^a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Atomic layer deposition; Flow rate interruption; X ray diffraction; ZnO

Indexed keywords

CONTINUOUS-FLOW; CONVENTIONAL METHODS; CRYSTALLINE FILMS; CRYSTALLINE QUALITY; DIETHYLZINC; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; LOW TEMPERATURES; NON-RADIATIVE RECOMBINATIONS; OPTIMAL GROWTH; SAPPHIRE SUBSTRATES; X RAY REFLECTIVITY; XRD; ZNO; ZNO FILMS; ZNO THIN FILM;

ATOMS; CRYSTALLINE MATERIALS; DEIONIZED WATER; DIFFRACTION; EPITAXIAL FILMS; METALLIC FILMS; OPTICAL PROPERTIES; OXIDE FILMS; SULFUR COMPOUNDS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

EID: 77649233142     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2009.12.028     Document Type: Article

References (33)

1. Mang A., Reimann K., and Rubenacke S. Solid State Commun. 94 (1995) 251
2. Kang H.S., Kang J.S., Kim J.W., and Lee S.Y. J. Appl. Phys. 95 (2003) 1246
3. Pearton S.J., Norton D.P., Ip K., Heo Y.W., and Steiner T. Superlattices Microstruct. 34 (2003) 3
4. Özgür U., Alivov Ya.I., Liu C., Teke A., Reshchikov M., Dogan S., Avrutin V., Cho S.-J., and Morkoc H. J. Appl. Phys. 98 (2005) 041301
5. Reynolds D.C., Look D.C., and Jogai B. Solid State Commun. 99 (1996) 873
6. Wraback M., Shen H., Liang S., Gorla C.R., and Lu Y. Appl. Phys. Lett. 74 (1999) 507
7. Look D.C., Reynolds D.C., Hemsky J.W., Jones R.L., and Sizelove J.R. Appl. Phys. Lett. 75 (1999) 811
8. Xu W.Z., Ye Z.Z., Zeng Y.J., Zhu L.P., Zhao B.H., Jiang L., Lu J.G., He H.P., and Zhang S.B. Appl. Phys. Lett. 88 (2006) 173506
9. Carcia P.F., McLean R.S., and Reilly M.H. Appl. Phys. Lett. 88 (2006) 123509
10. Tang Z.K., Wong G.K.L., Yu P., Kawasaki M., Ohtomo A., Koinuma H., and Segawa Y. Appl. Phys. Lett. 72 (1998) 3270
11. Saw K.G., Ibrahim K., Lim Y.T., and Chai M.K. Thin Solid Films 515 (2007) 2879
12. Hiramatsu T., Furuta M., Furuta H., Matsuda T., and Hirao T. Jpn. J. Appl. Phys. Part 1 46 (2007) 3319
13. Jianguo L., Yinzhu Z., Zhizhen Y., Lei W., Binghui Z., and Jinhyun H. Mater. Lett. 57 (2003) 3311
14. Masuda S., Kitamura K., Okumura Y., and Miyatake S. J. Appl. Phys. 93 (2003) 1624
15. Siddiqui J., Cagin E., Chen D., and Phillips J.D. Appl. Phys. Lett. 88 (2006) 212903
16. Kaminska E., Piotrowska A., Kossut J., Barcz A., Butkute R., Dobrowlski W., Dynowska E., Jakiela R., Przezdziecka E., Lukasiewicz R., Aleszkiewicz M., Wojnar P., and Kowalczyk E. Solid State Commun. 135 (2005) 11
17. Przezdziecka E., Kaminska E., Pasternak I., Piotrowska A., and Kossut J. Phys. Rev. B 76 (2007) 193303
18. Xiaonan L., Asher S.E., Limpijumnong S., Keyes B.M., Perkins C.L., Barnes T.M., Moutinho H.R., Luther J.M., Zhang S.B., Wei S.H.S., and Coutts T.J. J. Cryst. Growth 287 (2006) 94
19. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
20. Xiu F.X., Yang Z., Mandalapu L.J., Zhao D.T., Liu J.L., and Beyermann W.P. Appl. Phys. Lett. 87 (2005) 152101
21. Wojcik A., Godlewski M., Guziewicz E., Minikayev R., and Paszkowicz W. J. Cryst. Growth 310 (2008) 284
22. Lim J., and Lee C. Thin Solid Films 515 (2007) 3335
23. Lim J., Shin K., Kim H.W., and Lee C. J. Lumin. 109 (2004) 181
24. Kim S.K., Hwang C.S., Park S.-H.K., and Yun S.J. Thin Solid Films 478 (2005) 103
25. Wojcik A., Godlewski M., Guziewicz E., Kopalko K., Jakiela R., Kiecana M., Sawicki M., Guziewicz M., Putkonen M., Niinisto L., Dumont Y., and Keller N. Appl. Phys. Lett. 90 (2007) 082502
26. Van der Walle C.G., and Street R.A. Phys. Rev. B 51 (1995) 10615
27. Bao Z., Lovinger A.J., and Brown J. J. Am. Chem. Soc. 120 (1998) 207
28. Sunyeol J., Seokhwan B., Seungjun L., Semyung K., Wooho J., Hyeongtag J., Jung C.H., and Ho P.H. J. Electrochem. Soc. 155 (2008) H738
29. Pung S.Y., Choy K.L., Hou X., and Shan C. Nanotechnology 19 (2008) 435609
30. George S.M., Ott A.W., and Klaus J.W. J. Phys. Chem. 100 (1996) 13121
31. Swee-Yong P., Kwang-Leong C., Xianghui H., and Chongxin S. Nanotechnology 19 (2008) 435609
32. Groner M.D., Fabreguette F.H., Elam J.W., and George S.M. Chem. Mater. 16 (2004) 639
33. Meyer B.K., Alves H., Hofmann D.M., Kriegseis W., Forster D., Bertram F., Christen J., Hoffmann A., Straßurg M., Dworzak M., Haboeck U., and Rodina A.V. Phys. Stat. Sol. (b) 241 (2004) 231