Crystallization and related magnetotransport properties of amorphous manganite films grown by metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 379-384

  Dubourdieu, C ^a   Audier, M ^a   Roussel, H ^a   Senateur J P ^a   Pierre, J ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; AS-GROWN; HIGH RESISTIVITY; LOW-FIELD MAGNETORESISTANCE; MAGNETO TRANSPORT PROPERTIES; MAGNETORESISTIVE PROPERTY; MANGANITE FILMS; NUCLEATION AND GROWTH; ORDERING TEMPERATURE; ORDERS OF MAGNITUDE; POLYCRYSTALLINE FILM; RAPID THERMAL ANNEALING PROCESS; SILICON SUBSTRATES;

AMORPHOUS MATERIALS; ELECTRIC RESISTANCE; LANTHANUM; MANGANESE OXIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PEROVSKITE; RAPID THERMAL ANNEALING; TRANSMISSION ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION;

AMORPHOUS FILMS;

EID: 0036639542     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483919     Document Type: Article

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