High K capacitors and OFET gate dielectrics from self-assembled BaTiO 3 and (Ba,Sr)TiO3 nanocrystals in the superparaelectric limit

Advanced Functional Materials

Volumn 20, Issue 4, 2010, Pages 554-560

  Huang, Limin ^a   Jia, Zhang ^b   Kymissis, Loannis ^b   O'Brien, Stephen ^a  

^a CITY COLLEGE OF NEW YORK   (United States)

^b Department of Earth and Environmental Sciences   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUILDING BLOCKES; DEVICE FABRICATIONS; DIELECTRIC CONSTANTS; DIELECTRIC TUNABILITY; FLEXIBLE SUBSTRATE; HIGH-K DIELECTRIC; INTEGRATED DEVICE; LI-ION BATTERIES; LOW LEAKAGE; LOW LOSS; NANODIELECTRICS; NANOSTRUCTURED FILMS; NO ANNEALING; ORGANIC THIN FILM TRANSISTORS; PLASTIC ELECTRONICS; POLYMER COMPOSITE; ROOM TEMPERATURE; SELF-ASSEMBLED; SUPERPARAELECTRIC; SUPERPARAELECTRIC LIMIT; TIO;

BARIUM; BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; DIELECTRIC MATERIALS; FREQUENCY MODULATION; GATES (TRANSISTOR); LITHIUM BATTERIES; LITHOGRAPHY; NANOCRYSTALS; NANOPARTICLES; STRONTIUM COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

GATE DIELECTRICS;

EID: 77249087655     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200901258     Document Type: Article

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