Organic field-effect transistors with ultrathin gate insulator

Synthetic Metals

Volumn 144, Issue 1, 2004, Pages 97-100

  Majewski, L A ^a   Schroeder, R ^a   Grell, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Aluminium; High capacitance; OFET; Operating voltage; rrP3HT; SiO2

Indexed keywords

ALUMINUM; CAPACITANCE; CARRIER MOBILITY; ELECTRIC INSULATING MATERIALS; ELECTRIC POTENTIAL; SILICA; ULTRATHIN FILMS;

HIGH CAPACITANCE; OFET; OPERATING VOLTAGES; ORGANIC FIELD-EFFECT TRANSISTORS; REGIOREGULAR POLY(3-HEXYLTHIOPHENE); RRP3HT; SIO2;

GATES (TRANSISTOR);

EID: 2342614697     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2004.02.012     Document Type: Article

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