Low-operating-voltage organic field-effect transistors with poly-p-xylylene/high-k polymer bilayer gate dielectric

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 29-32, 2006, Pages

  Onoue, Tomoaki ^a   Nakamura, Ichiro ^a   Sakabe, Yukio ^a   Yasuda, Takeshi ^b   Tsutsui, Tetsuo ^b  

^a MURATA MANUFACTURING CO LTD   (Japan)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Chemical vapor deposition; Gate dielectrics; High k polymer; Organic field effect transistor; Poly p xylylene

Indexed keywords

BARIUM TITANATE; CHEMICAL VAPOR DEPOSITION; ELECTRIC INSULATORS; FIELD EFFECT TRANSISTORS; NANOPARTICLES; THRESHOLD VOLTAGE;

INSULATED SURFACES; ORGANIC FIELD EFFECT TRANSISTORS; PENTACENE;

GATE DIELECTRICS;

EID: 34548555524     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L770     Document Type: Article

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