Engineering density of semiconductor-dielectric interface states to modulate threshold voltage in OFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 9-13

  Wang, Annie ^b   Kymissis, Ioannis ^b   Bulović, Vladimir ^b   Akinwande, Akintunde Ibitayo ^a,b  

^a IEEE

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Organic compounds; Thin film transistors (TFTs)

Indexed keywords

ATOMIC FORCE MICROSCOPY; GATE DIELECTRICS; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; ORGANIC COMPOUNDS; ORGANIC POLYMERS; PERMITTIVITY; THRESHOLD VOLTAGE;

CAPACITANCE VOLTAGE CHARACTERIZATION; CHEMICAL TREATMENT; ORGANIC FIELD EFFECT TRANSISTORS (OFET); OXYGEN PLASMA TREATMENT;

FIELD EFFECT TRANSISTORS;

EID: 33748694496     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860633     Document Type: Article

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