Current-voltage characteristics of p-Si/carbon junctions fabricated by pulsed laser deposition

Microelectronic Engineering

Volumn 87, Issue 2, 2010, Pages 221-224

  Gupta, R K ^a   Ghosh, K ^a   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

Author keywords

Carbon; Junction parameters; Pulsed laser; Thin films

Indexed keywords

BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; FORWARD BIAS; IDEALITY FACTORS; IV CHARACTERISTICS; JUNCTION PARAMETERS; KRF EXCIMER LASER; PULSED DURATION; PULSED LASER; ROOM TEMPERATURE; SERIES RESISTANCES;

AMORPHOUS SILICON; CARBON FILMS; EXCIMER LASERS; GAS LASERS; KRYPTON; LASER SURGERY; PULSED LASER DEPOSITION; THIN FILMS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 70450278762     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.07.025     Document Type: Article

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