Effect of temperature on current-voltage characteristics of Cu2O/p-Si Schottky diode

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 5, 2009, Pages 876-878

  Gupta, R K ^a   Ghosh, K ^a   Kahol, P K ^a  

^a MISSOURI STATE UNIVERSITY   (United States)

Author keywords

Barrier height; Cu2O; Ideality factor; Pulsed laser; Schottky diode

Indexed keywords

DIODES; EMISSION SPECTROSCOPY; LASERS; PULSED LASER DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; THERMIONIC EMISSION; ULTRAVIOLET SPECTROSCOPY;

BARRIER HEIGHT; CU2O; IDEALITY FACTOR; PULSED LASER; SCHOTTKY DIODE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 61649096342     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.12.025     Document Type: Article

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