Traveling-wave photodetectors with high power-bandwidth and gain-bandwidth product performance

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 10, Issue 4, 2004, Pages 728-741

  Lasaosa, Daniel ^a   Shi, Jin Wei ^b   Pasquariello, Donato ^c   Gan, Kian Giap ^a   Tien, Ming Chun ^d   Chang, Hsu Hao ^d   Chu, Shi Wei ^d   Sun, Chi Kuang ^d   Chiu, Yi Jen ^e   Bowers, John E ^a  

^a University of California   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Amplifier; Gaas; High speed; Ingaasp; Photodetector; Traveling wave

Indexed keywords

ADSORPTION; AMPLIFIERS (ELECTRONIC); BANDWIDTH; NATURAL FREQUENCIES; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS; TELECOMMUNICATION; TRANSCEIVERS;

GAAS; HIGH SPEED; TRAVELING WAVE;

PHOTODETECTORS;

EID: 7644222351     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2004.833963     Document Type: Article

References (62)

1. J. E. Bowers and C. A. Burrus, "Ultrawide-band long-wavelength p-i-n photodetectors," J. Lightwave Technol., vol. LT-5, pp. 1339-1350, Oct. 1987.
2. K. Kato, "Ulrrawide-band/high-frequency photodetectors," IEEE Trans. Microwave Theory Tech., vol. 47, pp. 1265-1281, July 1999.
3. M. Gokkavas, B. M. Onat, E. Ozbay, E. P. Ata, J. Xu, E. Towe, and M. S. Urdu, "Design and optimization of high-speed resonant cavity enhanced scnottky photodiodes," IEEE J. Quantum Electron., vol. 35, pp. 208-215, Feb. 1999.
4. K. Kato, S. Hata, A. Kozen, J. Yoshida, and K. Kawano, "Eighly efficient 40 GHz waveguide InGaAs p-i-n photodiode employing multimode waveguide structure," IEEE. Photon. Technol. Lett., vol. 3, pp. 820-822. Sept 1991.
5. K. Kato, A. Kozen, Y. Muramoto, Y. Itaya, T. Nagatsuma, and M. Yaita, "110-GHz. 50% effiency mushroom-mesa waveguide p-i-n photodiode for a 1.55 μm wavelength." IEEE Photon. Technol. Lett., vol. 6, pp. 719-721, 1994.
6. H. F. Taylor, O. Eknoyan, C. S. Park, K. N. Choi, and K. Chang, "Traveling wave photodetectors," Optoelectron. Signal Processing Pkased-Array Antennas II, pp. 59-63, 1990.
7. K. S. Giboney, M. J. W. Rodwell, and J. E. Bowers, "Travelling-wave photodetectors," IEEE Photon. Technol. Lett., vol. 4, pp. 1363-1365, Dec. 1992.
8. G. A. Vawter and V. M. Hietala, "Unlimited-bandwidth distributed optical phase modulators and detectors: Design and fabrication issue." in Proc. Int. 1994 IEEE MTT-S Topical Meet. Optical Microwave Interactions, Nov. 21-23, 1994, pp. 3-6.
9. C. L. Goldsmith, G. A. Magel, B. M. Kanack, and R. J. Baca, "Coherent combing of RF signals in a traveling-wave photodetector array," IEEE Photon. Technol. Lett., vol. 9, pp. 998-990, July 1997.
10. [101 L. Y. Lin, M. C. Wu, T. ton, T. A. Vang, R. E. Mutter, D. L. Sivco, and A. Y. Cho, "Velocity-matched distributed photodetectors with high saturation power and large bandwidth," IEEE Photon. Technol. Lett., vol. 8, pp. 1376-1378, Oct. 1996.
11. H. Nie, K. A. Anselm, C. Lenox, P. Yuan, C. Hu, G. Kinsey, B. G. Streetman, and J. C. Campbell, "Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth product," IEEE Photon. Technol. Lett., vol. 10, pp. 409-411, Mar. 1998.
12. G. S. Kinsey, J. C. Campbell, and A. G. Dentai "Waveguide avalanche photodiode operating at 1.55 μm with a gain-bandwidth prodnct of 320 GHz," IEEE Photon. Technol. Lett., vol. 13, pp. 842-844, Aug. 2001.
13. J. Wei, F. Xia, and S. R. Forrest, "A high-responsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode," IEEE Photon. Technol. Lett., vol. 14, pp. 1590-1592. Nov. 2002.
14. W. Wu, A. R. Hawkins, and J. E. Bowers, "Design of silicon hetero-interface photodetectors," J. Lightwave Technol., vol. 15, pp. 1608-1615. Aug. 1997.
15. Y. Kang, P. Mages, A. R. Clawson, P. K. L. Yu, M. Bitter, Z. Pan, A. Pauchard, S. Hummel, and Y. H. Lo, "Fused InGaAs-Si avalanche photodiodes with low-noise performances," IEEE Photon. Technol. Lett., vol. 14, pp. 1593-1595, Nov. 2002.
16. T. Nakata, T. Takeuchi, I. Watanabe, K. Makita, and T. Torikai, "10 Gb/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure," Electron. Lett., vol. 36, pp. 2033-2034, Nov. 2000.
17. S. Hanatani, M. Shishikura, S. Tanaka, H. Kitano, T. Miyazaki, and H. Nakamura, "A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage," in Proc. Int. Conf. Indium Phosphide Related Materials 1995, May 1995, pp. 369-372.
18. T. Nakata, T. Takeuchi, K. Makita, and T. Torikai, "High-speed and high-sensitivity waveguide InAlAs avalanche photodiodes for 10-40 Gb/s receivers," in Proc. IEEE Lasers Electro-Optics Soc. 2001 Ann. Meeting, Nov. 2001, pp. 770-771.
19. S. Demiguel, X. Zheng, N. Li, X. Li, J. C. Campbell, J. Decobert, N. Tscherptner, and A. Anselm, "High-responsivity and high-speed evanes-cently-coupled avalanche photodiodes," Electron. Lett., vol. 39, Dec. 2003.
20. N. Shimizu, N. Watanabe, T. Furuta, and T. Ishibashi, "InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz," IEEE Photon. Technol. Lett., vol. 10, pp. 412-114, Mar. 1998.
21. H. Ito, T. Furuta, S. Kodama, N. Watanabe, and T. Ishibashi, "Inp/In-GaAs uni-travelling-carrier photodiode with 310 GHz bandwidth," Electron. Lett., vol. 36, pp. 1809-1810, Oct. 2000.
22. S. Jasmin, N. Vodjdani, J. Renaud, and A. Enard, "Diluted- and distributed-absorption microwave waveguide photodiodes for high efficiency and high power," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1337-1341, Aug. 1997.
23. V. M. Hietala, G. A. Vawter, T. M. Brenan, and B. E. Hammons, "Traveling-wave photodetectors for high-power, large bandwidth applications," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2291-2297, Sept. 1995.
24. J.-W. Shi and C.-K. Sun, "Design and analysis of long-absorption length traveling-wave photodetector," J. Lightwave Technol., vol. 18, pp. 2176-2187, Dec. 2000.
25. Y. Hirota, T. Ishibashi, and H. Ito, "1.55-//m wavelength periodic traveling-wave photodetector fabricated using unitraveling-carrier photodiode structures," J. Lightwave Technol., vol. 19, pp. 1751-1758, Nov. 2001.
26. a to W-band 1.55 μm traveling-wave photomixer," Electron. Lett., vol. 36, pp. 970-972, May 2000.
27. J.-W. Shi, K. G. Gan, Y. J. Chiu, Y.-H. Chen, C.-K. Sun, Y. J. Yang, and J. E. Bowers, "Metal-semiconductor-metal traveling-wave-photodetectors," IEEE Photon. Technol. Lett., vol. 13, pp. 623-625, June 2001.
28. J.-W. Shi, K. G. Gan, Y.-H. Chen, C.-K. Sun, Y. J. Chiu, and J. E. Bowers, "Ultra-high power-bandwidth product and nonlinear photo-conductance performances of low-temperature-grown GaAs based metal-semiconductor-metal traveling-wave photodetectors," IEEE Photon. Technol. Lett., vol. 14, pp. 1587-1589, Nov. 2002.
29. J.-W. Shi, Y.-H. Chen, K.-G. G, Y.-J. Chiu, C.-K. Sun, and J. E. Bowers, "High speed and high power performances of LTG-GaAs based metal-semiconduclor-metal traveling-wave-photodetectors in 1.3 μm wave-length regime," IEEE Photon. Technol. Lett., vol. 14, pp. 363-365, Mar. 2002.
30. J.-W. Shi, Y.-H. Chen, K. G. Gan, Y. J. Chiu, J. E. Bowers, M.-C. Tien, T.-M. Liu, and C.-K. Sun, "Nonlinear behaviors of low-temperature-grown GaAs-based photodetectors around 1.3-μm telecommunication wavelength," IEEE Photon. Technol. Lett., vol. 16, pp. 242-244, Jan. 2004.
31. C.-K. Sun, Y.-H. Chen, J.-W. Shi, Y.-J. Chiu, K. G. Gan, and J. E. Bowers, "Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation," Appl. Phys. Lett., vol. 83, pp. 911-913, Aug. 2003.
32. J.-W. Shi, S.-W. Chu, M.-C. Tien, C.-K. Sun, Y. J. Chiu, and J. E. Bowers, "Edge-coupled membrane THz photonic transmitter based on metal-semiconductor-metal traveling-wave photodetectors," Appl. Phys. Lett., vol. 80, pp. 5108-5110, Dec. 2002.
33. M.-C. Tien, H.-H. Chang, J.-Y. Lu, L.-J. Chen, S.-Y. Chen, R.-B. Wu, W.-S. Liu, J.-I. Chyi, and C.-K. Sun, "Device saturation behavior of submillimeter-wave membrane photonic transmitters," IEEE Photon. Technol Lett., vol. 16, pp. 873-875, Mar. 2004.
34. D. Lasaosa, Y. J. Chiu, J. Piprek, and J. E. Bowers, "Traveling-wave amplification photodetector (TAP detector)," in Proc. 13th Ann. Meeting IEEE Lasers and Electro-Optics Soc. (LEOS), vol. 1, 2000, pp. 260-261.
35. _, "Modeling of traveling-wave amplification photodetectors (TAP detectors)," in Proc. SPIE-Photonics West Int. Symp., vol. 4283, 2001, pp. 528-539.
36. J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers, "Physics of waveguide photodetectors with integrated amplification," in Proc. SPIE-Photonics West Int. Symp., vol. 4986, 2003.
37. _, "Optimization of GaAs amplification photodetectors for 700% quantum efficiency," IEEE J. Select. Topics Quantum Electron., vol. 9, pp. 776-782, May/June 2003.
38. D. Lasaosa, D. Pasquariello, J. Piprek, and J. E. Bowers, "Recent advances in photodetectors with distributed optical amplification," in Proc. SPIE-ITCom Int. Symp., vol. 5246, 2003.
39. J. Piprek, D. Pasquariello, D. Lasaosa, and J. E. Bowers, "1.55 μm traveling-wave amplification photodetector," in Proc. Int. Conf. Indium Phosphide and Related Materials (IPRM), 2003, pp. 499-501.
40. D. Pasquariello, J. Piprek, D. Lasaosa, and J. E. Bowers, "InP-based waveguide photodetector with integrated photon multiplication," in Proc. SPIE-ITCom Int. Symp., vol. 5248, 2003.
41. K. C. Gupta, R. Garg, I. Bahl, and P. Bhartia, Microstrip Lines and Slot-lines. Boston, MA: Artech, 1996.
42. K. J. Weingarten, M. J. W. Rodwell, and D. M. Bloom, "Picosecond optical sampling of GaAs integrated circuits," IEEE J. Quantum Electron., vol. 24, pp. 198-220, 1988.
43. Y. J. Chiu, S. B. Fleischer, and J. E. Bowers, "High-speed low-temperature-grown GaAs p-i-n traveling-wave photodetector," IEEE Photon. Technol. Lett., vol. 10, pp. 1012-1014, July 1998.
44. Y. J. Chiu, S. B. Fleischer, J. E. Bowers, A. C. Gossard, and U. K. Mishra, "High-power, high-speed, low-temperature-grown GaAs p-i-n traveling wave photodetector," in Conf. Lasers Electro-Optics, May 1998, pp. 501-502. OSA Tech. Dig.
45. K. G. Can, J.-W. Shi, Y.-H. Chen, C.-K. Sun, Y. J. Chiu, and J. E. Bowers, "Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors," Appl. Phys. Lett., vol. 80, pp. 4054-4056, May 2002.
46. C.-K. Sun, I.-H. Tan, and J. E. Bowers, "Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination," IEEE Photon. Technol. Lett., vol. 10, pp. 135-137, Jan. 1998.
47. K. S. Giboney, M. J. Rodwell, and J. E. Bowers, "Traveling-wave photodetector design and measurements," IEEE J. Select. Topics Quantum Electron., vol. 2, pp. 622-629, Sept. 1996.
48. L. Y. Lin, M. C. Wu, T. Itoh, T. A. Vang, R. E. Muller, D. L. Sivco, and A. Y. Cho, "High-power high-speed photodetectors design, analysis, and experiment demonstration," IEEE Trans. Microwave Theory Tech., vol. 45, pp. 1320-1331, Aug. 1997.
49. Y.-L. Huang and C.-K. Sun, "Nonlinear saturation behaviors of high-speed p-i-n photodetectors," J. Lightwave Technol., vol. 18, pp. 203-212, Feb. 2000.
50. H. Erlig, S. Wang, T. Azfar, A. Udupa, H. R. Fetterman, and D. C. Streit, "LT-GaAs detector with 451 fs response at 1.55 μm via two-photon absorption," Electron. Lett., vol. 35, pp. 173-174, Jan. 1999.
51. M. Tani, K.-S. Lee, and X.-C. Zhang, "Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 μm probe," Appl. Phys. Lett., vol. 77, pp. 1396-1398, Aug. 2000.
52. N. Zamdmer, Q. Hu, K, A. McIntosh, and S. Verghese, "Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias," Appl. Phys. Lett., vol. 75, pp. 2313-2315, 1999.
53. K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, W. F. DiNatale, and T. M. Lyszczarz, "Terahertz photomixing with diode lasers in low-temperature-grown GaAs," Appl. Phys. Lett., vol. 67, pp. 3844-3846, 1995.
54. H. Eisele, A. Rydberg, and G. I. Haddad, "Recent advances in the performance of InP Gunn devices and GaAs TUNNET diodes for the 100-300-GHz frequency range and above," IEEE Trans. Microwave Theory Tech., vol. 48, pp. 626-631, Apr. 2000.
55. Yu. P. Gousev, I. V. Altukhov, K. A. Korolev, V. P. Sinis, M. S. Kagan, E. E. Haller, M. A. Odnoblyudov, I. N. Yassievich, and K.-A. Chao, "Widely tunable continuous-wave THz laser," Appl. Phys. Lett., vol. 75, pp. 757-759, 1999.
56. [561 R. Kohler, A. Tredicucci, F. Beltram, H. E. Beere, E. H. Linfield, A. G. Davies, D. A. Ritchie, R. C. Iotti, and F. Rossi, "Terahertz semiconductor-heterostructure lasers," in Conf. Lasers Electro-Optics (CLEO), 2002. OSA, postdeadline papers, CPDC12-1.
57. M. Reddy, S. C. Martin, A. C. Molnar, R. E. Muller, R. P. Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, H. Kroemer, and S. J. Allen Jr., "Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz," IEEE Electron Device Lett., vol. 18, pp. 218-221, 1997.
58. S. M. Duffy, S. Verghese, K. A. McIntosh, A. Jackson, A. C. Gossard, and S. Matsunra, "Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1032-1038, June 2001.
59. A. W. Jackson, Ph.D. dissertation, Univ. California, Santa Barbara, 1999.
60. D. Lasaosa. "Traveling-Wave amplifier photodetectors," Ph.D. dissertation, Univ. California, Santa Barbara, 2004.
61. D. Lasaosa and J. E. Bowers, "New model for the evolution of photon and electron number statistics in the presence of distributed optical amplification and photodetection," to be published.
62. K. Shimoda, H. Takahasi, and C. H. Townes, "Fluctuations in amplification of quanta with application to maser amplifiers," J. Phys. Soc. Japan, vol. 12, no. 6, p. 686, 1957.