LT-GaAs detector with 451 fs response at 1.55 μm via two-photon absorption

Electronics Letters

Volumn 35, Issue 2, 1999, Pages 173-174

  Erlig, H ^a   Wang, S ^a   Azfar, T ^a   Udupa, A ^a   Fetterman, H R ^a   Streit, D C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT POLARIZATION; LOW TEMPERATURE EFFECTS; OPTICAL SWITCHES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

TWO-PHOTON ABSORPTION;

PHOTODETECTORS;

EID: 0032677808     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990109     Document Type: Article

References (8)