Nonlinear Behaviors of Low-Temperature-Grown GaAs-Based Photodetectors Around 1.3-μm Telecommunication Wavelength

IEEE Photonics Technology Letters

Volumn 16, Issue 1, 2004, Pages 242-244

  Shi, Jin Wei ^a,b   Chen, Yen Hung ^c   Gan, Kian Giap ^d   Chiu, Yi Jen ^c   Bowers, John E ^d   Tien, Ming Chun ^c   Liu, Tzu Ming ^c   Sun, Chi Kuang ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c University of California   (United States)

^d NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Bandwidth saturation; Metal semiconductor metal (MSM) devices; Photodetector; Traveling wave devices

Indexed keywords

BANDWIDTH; CARRIER CONCENTRATION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTOCONDUCTING MATERIALS; PHOTODETECTORS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE;

PHOTOGENERATED CARRIERS; TRAVELING WAVE DEVICES;

TELECOMMUNICATION INDUSTRY;

EID: 1642463019     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.819418     Document Type: Article

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