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Volumn , Issue , 1998, Pages 501-502
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High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
ELECTROOPTICAL EFFECTS;
FABRICATION;
MOLECULAR BEAM EPITAXY;
QUANTUM EFFICIENCY;
SEMICONDUCTING GALLIUM ARSENIDE;
PHOTOCURRENT;
TRAVELING WAVE PHOTODETECTORS;
PHOTODETECTORS;
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EID: 0031617601
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (5)
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References (8)
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