Increase in response time of low-temperature-grown GaAs photoconductive switches at high voltage bias

Applied Physics Letters

Volumn 75, Issue 15, 1999, Pages 2313-2315

  Zamdmer, N ^a   Hu, Qing ^a   McIntosh, K A ^b   Verghese, S ^b  

^a USA   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000089621     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125008     Document Type: Article

References (22)

1. P. Kordoš, A. Förster, M. Marso, and F. Rüders, Electron. Lett. 34, 119 (1998).
2. K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, W. F. DiNatale, and T. M. Lyszczarz, Appl. Phys. Lett. 67, 3844 (1995).
3. S. Verghese, K. A. McIntosh, and E. R. Brown, Appl. Phys. Lett. 71, 2743 (1997).
4. M. Y. Frankel, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, IEEE Trans. Electron Devices 37, 2493 (1990).
5. J. Allam, N. de B. Baynes, J. R. A. Cleaver, K. Ogawa, T. Mishima, and I. Ohbu, Opt. Quantum Electron. 28, 875 (1996).
6. E. R. Brown, K. A. McIntosh, F. W. Smith, K. B. Nichols, M. J. Manfra, C. L. Dennis, and J. P. Mattia, Appl. Phys. Lett. 64, 3311 (1994).
7. J. P. Ibbetson and I. K. Mishra, Appl. Phys. Lett. 68, 3781 (1996).
8. K. A. McIntosh, K. B. Nichols, S. Verghese, and E. R. Brown, Appl. Phys. Lett. 70, 354 (1997).
9. F. W. Smith, Ph.D. thesis, Massachusetts Institute of Technology, Cambridge, 1990 (unpublished).
10. A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, and N. Otsuka, Appl. Phys. Lett. 57, 1331 (1990).
11. J. K. Luo, H. Thomas, D. V. Morgan, and D. Westwood, J. Appl. Phys. 79, 3622 (1996).
12. A. J. Lochtefeld, M. R. Melloch, J. C. P. Chang, and E. S. Harmon, Appl. Phys. Lett. 69, 1465 (1996).
13. M. Stellmacher, J. Schnell, D. Adam, and J. Nagle, Appl. Phys. Lett. 74, 1239 (1999).
14. C. Y. Sung, H. H. Wang, T. B. Norris, and J. F. Whitaker, in Technical Digest of Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 1996), p. 454.
15. U. D. Keil, J. M. Hvam, S. Tautz, S. U. Dankowski, P. Kiessel, and G. H. Döhler, Appl. Phys. Lett. 70, 72 (1997).
16. S. Verghese, N. Zamdmer, Q. Hu, E. R. Brown, and A. Förster, Appl. Phys. Lett. 69, 842 (1996).
17. D. C. Look, D. C. Walters, G. D. Robinson, J. R. Sizelove, M. G. Mier, and C. E. Stutz, J. Appl. Phys. 74, 306 (1993).
18. P. Arifin, E. Goldys, and T. L. Tansley, Phys. Rev. B 52, 5708 (1995).
19. T. H. Ning, J. Appl. Phys. 47, 3203 (1976).
20. G. A. Dussel and K. W. Böer, Phys. Status Solidi 39, 375 (1970).
21. S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
22. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).