FinFET Performance Enhancement with Tensile Metal Gates and Strained Silicon on Insulator (sSOI) Substrate

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2006, Pages 39-40

  Xiong, Weize ^a   Shin, Kyoungsub ^b   Cleavelin, C Rinn ^a   Schulz, Thomas ^c   Schruefer, Klaus ^c   Cayrefourcq, I ^d   Kennard, M ^d   Mazure, C ^d   Patruno, Paul ^d   Liu, Tsu Jae King ^b,e  

^a TEXAS INSTRUMENTS   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d PARC TECHNOLOGIQUE DES FONTAINES   (France)

^e SYNOPSYS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85205698506     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. Z. Krivokapic et al., IEDM Tech. Dig., 18.5.1 (2003)
5. I. Cayrefourcq et al., SOI Tech. and Dev. XII, ECS Proceedings Vol. 2005-03, 191, (2005)
6. C. S. Smith, Phys. Rev., 94, 42 (1954)