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Volumn 157, Issue 3, 2010, Pages

Effects of lens shape on GaN grown on microlens patterned sapphire substrates by metallorganic chemical vapor deposition

(9) Lin, Hung Cheng a Liu, Hsueh Hsing a Lee, Geng Yen a Chyi, Jen Inn a,b Lu, Chang Ming c Chao, Chih Wei c Wang, Te Chung c Chang, Chun Jong c Chi, Solomon W S c

a NATIONAL CENTRAL UNIVERSITY (Taiwan)

b RESEARCH CENTER FOR APPLIED SCIENCES (Taiwan)

c Lextar Electronics Corporation (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; COMPRESSIVE STRAIN; DISLOCATION DENSITIES; GROWTH MODES; GROWTH OF GAN; HIGH BRIGHTNESS; INTERNAL QUANTUM EFFICIENCY; LATERAL GROWTH; LENS SHAPE; LOW-DISLOCATION DENSITY; MICRO-LENS; PATTERNED SAPPHIRE SUBSTRATE; PATTERNED SUBSTRATES; POTENTIAL APPLICATIONS; RESIDUAL STRAINS; SHARP TIP;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROLENSES; OPTICAL INSTRUMENTS; OPTICAL PROPERTIES; ORGANOMETALLICS; SAPPHIRE; SUBSTRATES;

GALLIUM ALLOYS; SUBSTRATES;

EID: 76349109511 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3280949 Document Type: Article

Times cited : (35)

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