Demonstration of high-efficient InGaN-based violet light-emitting diodes with an external-quantum efficiency of more than 40%

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 95-98

  Kudo, Hiromitsu ^a   Ohuchi, Youichiro ^a   Jyouichi, Takahide ^a   Tsunekawa, Takashi ^a   Okagawa, Hiroaki ^a   Tadatomo, Kazuyuki ^a   Sudo, Yasuhide ^a   Kato, Munehiro ^b   Taguchi, Tsunemasa ^c  

^a Mitsubishi Cable Industries Ltd   (Japan)

^b STANLEY ELECTRIC CO LTD   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

EXTRACTION EFFICIENCY; PATTERNED SAPPHIRE SUBSTRATE;

LIGHT EMITTING DIODES;

EID: 0347611577     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303513     Document Type: Article

References (5)

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3. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, T. Jyouichi, Y. Imada, M. Kato, H. Kudo, and T. Taguchi, phys. stat. sol. (a) 188, 121 (2001).
4. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, Jpn. J. Appl. Phys. 41, L1431 (2002).
5. H. Okagawa, Y. Ohuchi, T. Tsunekawa, K. Tadatomo, and H. Tanaka, in: Extended Abstracts of the International Symposium on The Light for the 21st Century, Tokyo (ILCC Co., Ltd., Tokyo, Japan, 2002), p. 4.