Light output enhancement of InGaN light-emitting diodes grown on Masklessly etched sapphire substrates

IEEE Photonics Technology Letters

Volumn 20, Issue 19, 2008, Pages 1621-1623

  Lin, Hung Cheng ^a   Lin, Ruo Syuan ^a   Chyi, Jen Inn ^a,b   Lee, Chia Ming ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^c Tekcore Company Ltd   (Taiwan)

Author keywords

GaN; InGaN; Light emitting diodes (LEDs); Patterned sapphire

Indexed keywords

CORUNDUM; ELECTRIC PROPERTIES; LIGHT EMISSION; SAPPHIRE; SUBSTRATES;

FLAT SUBSTRATES; GAN; INGAN; LIGHT-EMITTING DIODES (LEDS); LIGHT-OUTPUT ENHANCEMENT; MASKLESS; OPTICAL AND ELECTRICAL PROPERTIES; OUTPUT POWERS; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATES; SAPPHIRE SUBSTRATES; WET-ETCHING;

LIGHT EMITTING DIODES;

EID: 52149099492     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.2002736     Document Type: Article

References (17)

1. T. S. Zheleva, O.-H. Nam, M. D. Bremser, and R. F. Davis, "Dislocation density reduction via lateral epitaxy in selectively grown GaN structures," Appl. Phys. Lett., vol. 71, no. 17, pp. 2472-2474, 1997.
2. T. Shibata, H. Sone, K. Yahashi, M. Yamaguchi, K. Hiramatsu, N. Sawaki, and N. Itoh, "Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth," J. Cryst. Growth, vol. 189, pp. 67-71, 1998.
3. P. Vennèguès, B. Beaumont, V. Bousquet, M. Vaille, and P. Gibart, "Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods," J. Appl. Phys., vol. 87, no. 9, pp. 4175-4181, 2000.
4. K. Hiramatsu, K. Nishiyama, M. Onishi, H. Mizutani, M. Narukawa, A. Motogaito, H. Miyake, Y. Iyechika, and T. Maeda, "Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)," J. Cryst. Growth, vol. 221, no. 1-4, pp. 316-326, 2000.
5. S. Sakai, T. Wang, Y. Morishima, and Y. Naoi, "A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE," J. Cryst. Growth, vol. 221, no. 1-4, pp. 334-337, 2000.
6. x nanonetwork," Appl. Phys. Lett., vol. 90, no. 4, p. 041107, 2007.
7. Y. Fu, Y. T. Moon, F. Yun, Ü. Özgür, J. Q. Xie, S. Dogan, H. Morkoç, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, "Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy," Appl. Phys. Lett., vol. 86, no. 4, p. 043108, 2005.
8. Ü. Özgür, Y. Fu, Y. T. Moon, F. Yun, H. Morkoq, H. O. Everitt, S. S. Park, and K. Y. Lee, "Long carrier lifetimes in GaN epitaxial layers grown using TiN porous network templates," Appl. Phys. Lett. vol. 86, no. 23, p. 232106, 2005.
9. M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, "InGaN-based near-ultraviolet and blue-light-emitting diodes with high external quantum efficiency using a patterned sapphire substrate and a mesh electrode," Jpn. J. Appl. Phys., vol. 41, no. 12B, pp. L1431-L1433, 2002.
10. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, "High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy," Jpn. J. Appl. Phys., vol. 40, no. 6B, pp. L583-L585, 2001.
11. Y. J. Lee, J. M. Hwang, T. C. Hsu, M. H. Hsieh, M. J. Jou, B. J. Lee, T. C. Lu, H. C. Kuo, and S. C. Wang, "Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates," IEEE Photon. Technol. Lett., vol. 18, no. 10, pp. 1152-1154, May 15, 2006.
12. D. S. Wuu, W. K. Wang, W. C. Shih, R. H. Horng, C. E. Lee, W. Y. Lin, and J. S. Fang, "Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates," IEEE Photon. Technol. Lett., vol. 17, no. 2, pp. 288-290, Feb. 2005.
13. D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, S. Y. Huang, C. F. Lin, and R. H. Horng, "Defect reduction and efficiency improvement of near-ultraviolet emitters via laterally overgrown GaN on a GaN/patterned sapphire template," Appl. Phys. Lett., vol. 89, no. 16, p. 161105, 2006.
14. 1-x N-based near-ultraviolet light-emitting diodes," Appl. Phys. Lett., vol. 83, no. 24, pp. 4906-4908, 2003.
15. F. Dwikusuma, D. Saulys, and T. F. Kuech, "Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments," J. Electrochem. Soc., vol. 149, no. 11, pp. G603-G608, 2002.
16. S.-J. Kim, "Vertical electrode GaN-based light-emitting diode fabricated by selective wet etching technique," Jpn. J. Appl. Phys. vol. 44, no. 5A, pp. 2921-2924, 2005.
17. C.-C. Pan, C.-H. Hsieh, G.-Y. Lee, and J.-L Chyi, "Light output improvement of InGaN ultraviolet light-entitting diodes by using wet-etched stripe-patterned sapphire substrates," J. Appl. Phys., vol. 102, no. 8, p. 084503, 2007.