Electrical properties and structure of laser-spike-annealed hafnium oxide

Thin Solid Films

Volumn 518, Issue 10, 2010, Pages 2812-2815

  Kim, Dong Hak ^a   Park, Joon Won ^a   Chang, You Min ^b   Lim, D ^a   Chung, Haeyang ^a,b  

^a Kyung Hee University   (South Korea)

^b Technology Research Center   (South Korea)

Author keywords

Charge trap; Defects; Hafnium oxide; High k dielectrics; Laser spike annealing; Transmission electron spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

CHARGE TRAP; HIGH-K DIELECTRIC; HIGH-K DIELECTRICS; SPIKE ANNEALING; TRANSMISSION ELECTRON;

CHARGE TRAPPING; ELECTRON MICROSCOPES; ELECTRON SPECTROSCOPY; ELECTRONS; HAFNIUM; HAFNIUM OXIDES; LOGIC GATES; OXIDES; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; TRANSMISSION ELECTRON MICROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 76249102508     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.08.039     Document Type: Article

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