Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

Applied Physics Letters

Volumn 92, Issue 8, 2008, Pages

  Sharp, J A ^a   Smith, A J ^a   Webb, R P ^a   Kirkby, K J ^a   Cowern, N E B ^b   Giubertoni, D ^c   Gennaro, S ^c   Bersani, M ^c   Foad, M A ^d   Fazzini, P F ^e   Cristiano, F ^e  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b NEWCASTLE UNIVERSITY   (United Kingdom)

^c FONDAZIONE BRUNO KESSLER   (Italy)

^d APPLIED MATERIALS INC   (United States)

^e UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DEFECTS; DISSOLUTION; LASER BEAM EFFECTS; SECONDARY ION MASS SPECTROMETRY; SHEET RESISTANCE;

DEFECT FORMATION; LASER ANNEALING; SURFACE PROXIMITY;

SILICON;

EID: 40049084796     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2885091     Document Type: Article

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