SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

Fluorine passivation in poly- Si/TaN/HfO2 through ion implantation

(8) Zhang, M H a Zhu, F a Lee, T a Kim, H S a Ok, I J a Thareja, G a Yu, L a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE STACKS; HFO2; SUBTHRESHOLD SWINGS; TAN;

ELECTRON ENERGY LOSS SPECTROSCOPY; FIELD EFFECT TRANSISTORS; FLUORINE; ION IMPLANTATION; PASSIVATION; SEMICONDUCTOR DEVICES; TANTALUM COMPOUNDS; THICKNESS MEASUREMENT;

POLYSILICON;

EID: 33749498426 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2358950 Document Type: Article

Times cited : (3)

References (8)

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