Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 769-774

  Choi, J Y ^a   Schroder, Dieter K ^a  

^a Arizona State University   (United States)

Author keywords

Interface trap density; Pseudo MOSFET; Schottky barrier; Semiconductor device measurements; Silicon; Silicon on insulator; Surface charge; Threshold voltage

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); HYDROFLUORIC ACID; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

INTERFACE TRAP DENSITY; SEMICONDUCTOR DEVICE MEASUREMENTS; SURFACE CHARGE;

MOSFET DEVICES;

EID: 33645729147     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871179     Document Type: Article

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