In situ S-doping of cubic boron nitride thin films by plasma enhanced chemical vapor deposition

Materials Science Forum

Volumn 638-642, Issue , 2010, Pages 2956-2961

  Yang, Hangsheng ^a   Kurebayashi, Norihiko ^b   Yoshida, Toyonobu ^b  

^a ZHEJIANG UNIVERSITY   (China)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Annealing; Cubic boron nitride film; Dope; Plasma enhanced chemical vapor deposition; Residual compressive stress

Indexed keywords

ANNEALING; COMPRESSIVE STRESS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; NUCLEATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SUBSTRATES; THIN FILMS;

BORON NITRIDE THIN FILMS; CUBIC BORON NITRIDE (CBN); CUBIC BORON NITRIDE FILMS; DOPE; HETEROJUNCTION DIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEMS; RECTIFICATION RATIO; RESIDUAL COMPRESSIVE STRESS;

CUBIC BORON NITRIDE;

EID: 75849141768     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.638-642.2956     Document Type: Conference Paper

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