Rectification properties of layered boron nitride films on silicon

Applied Physics Letters

Volumn 83, Issue 5, 2003, Pages 943-945

  Nose, K ^a   Tachibana, K ^a   Yoshida, T ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CUBIC BORON NITRIDE; CURRENT VOLTAGE CHARACTERISTICS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DIODES;

RECTIFICATION POLARITY;

SEMICONDUCTING SILICON;

EID: 0042378369     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597744     Document Type: Article

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